MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJM138NSA


MOSFET N Trench 50V 220mA 2V @ 250uA 3.5 Ω @ 220mA,10V SOT-23 RoHS
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Pingjingsemi 4442
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AUD 0.0291
Multiples of: 20

                   
DI100N10PQ


MOSFETs MOSFET, PowerQFN 5x6, 100V, 80A, 150C, N
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Diotec 4437
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AUD 1.82
Multiples of: 1

                   
ISZ810P06LMATMA1


MOSFETs N
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Infineon 4434
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AUD 0.6868
Multiples of: 1

19.5 A60 V81 mOhmsP - Channel 2 V- 55 C+ 175 C83 WSMD/SMTTSDSON - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V16 nCEnhancement  
BSS138-TP-ES


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 4431
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AUD 0.0112
Multiples of: 50

                   
PJ2301-AU_R1_000A1


MOSFET P Trench 20V 3.1A 1.2V @ 250uA 100 mΩ @ 3.1A,4.5V SOT-23 RoHS
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Panjit 4429
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AUD 0.091
Multiples of: 5

                   
BSC057N03LS G


Infineon Technologies MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3
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Infineon 4325
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AUD 0.5237
Multiples of: 1

17 A30 V5.7 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V30 nCEnhancement Optimos
SISS588DN-T1-BE3


MOSFETs N-Channel 80 V (D-S) MOSFET 150 C 8 m 10V
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Vishay 4308
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AUD 0.7848
Multiples of: 1

58.1 A80 V8 mOhmsN - Channel 4 V- 55 C+ 150 C56.8 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V18.7 nCEnhancement  
DMT10H015LFG-7


MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
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Diodes Incorporated 3909
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AUD 0.7388
Multiples of: 1

42 A100 V13.5 mOhmsN - Channel 2 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel10 V33.3 nCEnhancement Powerdi
RS6P060BHTB1


MOSFETs RS6P060BH is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
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ROHM 3894
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AUD 1.7239
Multiples of: 1

60 A100 V10.6 mOhmsN - Channel 4 V- 55 C+ 150 C73 WSMD/SMTHSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25 nCEnhancement  
IPT60R022S7XTMA1


MOSFET HIGH POWER_NEW
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Infineon 3435
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AUD 8.0776
Multiples of: 1

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