MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD60R800CEAUMA1


MOSFET CONSUMER
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4840
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AUD 0.6114
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 600 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
TK12A50W,S5X(M


TO-220SIS MOSFETs ROHS
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Toshiba 4840
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AUD 1.0785
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TSM150NB04DCR RLG


MOSFET Dual N-Chan Pwr MOSFET 40V 48A 15mu
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Taiwan Semiconductor 4840
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AUD 1.8058
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           Reel       
IQD016N08NM5ATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 4840
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AUD 3.68
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323 A80 V1.57 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V106 nCEnhancement  
DMP3010LPS-13


Diodes Incorporated MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS
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Diodes Incorporated 4839
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AUD 0.6804
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- 36 A- 30 V7.5 mOhmsP - Channel20 V- 2.1 V- 55 C+ 150 C2.18 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel20 V126.2 nCEnhancement  
CJ3420-ES


20V 6A 22m@10V,6.0A 350mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 4838
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AUD 0.0189
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WST2304


SOT-23-3L MOSFETs ROHS
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Winsok 4838
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AUD 0.0696
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XPH1R104PS,L1XHQ


MOSFETs 40V UMOS9-H SOP Advance(WF) 1.1mohm
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Toshiba 4838
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AUD 1.0173
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120 A40 V1.96 mOhmsN - Channel 3 V + 175 C132 WSMD/SMTSOP - 8Reel , Cut TapeSi - 20 V , + 20 V55 nCEnhancement  
BSZ0500NSIATMA1


MOSFET TRENCH <= 40V
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Infineon 4838
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AUD 1.7049
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         Smd/SmtTSDSON - 8Cut TapeSi     Optimos
TSM650N15CR RLG


MOSFET 150V, 24A, Single N- Channel Power MOSFET
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Taiwan Semiconductor 4838
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AUD 4.5
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24 A150 V N - Channel 2 V- 55 C+ 150 C96 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V36 nCEnhancement  
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