MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS3590


MOSFET SO-8 N-CH 80V
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ON Semiconductor 4472
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AUD 0.5467
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6.5 A80 V32 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel20 V Enhancement Powertrench
IRF7316TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 4471
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AUD 0.1759
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BSC886N03LSGATMA1


MOSFET TRENCH <= 40V
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Infineon 4470
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AUD 0.4571
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           Reel      Optimos
BSC042N03MS G


Infineon Technologies MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M
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Infineon 4467
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AUD 0.5962
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17 A30 V4.2 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
Hot BSC0923NDI


MOSFET N-Ch 30V30V 40A40A TISON-8
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Infineon 4464
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AUD 0.6419
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40 A30 V3.8 mOhms , 2.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtTISON - 8Cut TapeSi2 Channel20 V10 nC , 18.4 nCEnhancement Optimos
SIRA00DP-T1-GE3


Vishay Semiconductors MOSFET 30V 1mOhm10V 60A N-Ch G-IV
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Vishay 4110
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AUD 0.8326
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           -       
IRF7103TRPBFXTMA1


MOSFETs PLANAR 40<-<100V
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Infineon 3647
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AUD 0.3858
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3 A50 V130 mOhmsN - Channel 3 V- 55 C+ 150 C2 WSMD/SMTSO - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V12 nCEnhancement  
MMFTP2319


MOSFETs MOSFET, SOT-23, -40V, -4.2A, 150C, P
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Diotec 3621
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AUD 0.1494
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4.2 A40 V80 mOhmsP - Channel 3 V- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Reel , Cut Tape 1 Channel- 20 V , + 20 V20 nCEnhancement  
IXTA64N10L2


MOSFET MSFT N-CH LINEAR L2
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IXYS 3005
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AUD 15.3179
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64 A100 V32 mOhmsn - channel 2.5 V- 55 C+ 150 C357 Wsmd/smtTO - 263 - 3Tubesi1 channel20 V100 nCenhancement  
DMN3021LFDF-7


MOSFET MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K
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Diodes Incorporated 11
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AUD 0.2036
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         Smd/SmtU - DFN2020 - F - 6Cut TapeSi      
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