MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPIRFTS9342TRPBF


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 4556
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AUD 0.1159
Multiples of: 5

                   
IPD19DP10NMATMA1


MOSFET TRENCH >=100V
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Infineon 4556
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AUD 0.7944
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13.7 A100 V186 mOhmsP - Channel 4 V- 55 C+ 175 C83 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V36 nCEnhancement  
YJG210G06AR


60V 210A 208W 1.6m@10V 1V@250uA 1 N-Channel PDFN5060-8L MOSFETs ROHS
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Yangjie 4556
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AUD 1.1147
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3LN01SS-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 4553
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AUD 0.0952
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150 mA30 V3.7 OhmsN - Channel  - 55 C+ 150 C150 mWSmd/SmtSMCP - 3ReelSi1 Channel10 V    
RQ3E150BNTB


N-Channel 30 V 15A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
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ROHM 4552
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AUD 0.2922
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22 A30 V3.8 mOhmsN - Channel 1 V- 55 C+ 150 C18 WSmd/SmtH SMT - 8Tape And ReelSi1 Channel20 V45 nCEnhancement  
IRF9389TRPBF


SOP-8 MOSFETs ROHS
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TECH PUBLIC 4551
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AUD 0.253
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MCACL2D5N06YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 4319
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AUD 0.99
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140 A60 V2.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C114 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V71 nCEnhancement  
DMP2040USS-13


MOSFET MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K
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Diodes Incorporated 3583
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AUD 0.1937
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7 A20 V33 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8Cut TapeSi1 Channel12 V19 nCEnhancement  
NTD3055-150T4G


ON Semiconductor MOSFET 60V 9A N-Channel
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ON Semiconductor 2425
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AUD 0.6009
Multiples of: 2500

9 A60 V122 mOhmsN - Channel20 V - 55 C+ 175 C28.8 WSmd/SmtDPAK - 3ReelSi1 Channel20 V Enhancement  
IXTH30N60L2


MOSFET 30 Amps 600V
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IXYS 1085
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AUD 21.3104
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30 A600 V240 mOhmsn - channel 2.5 V- 55 C+ 150 C540 Wthrough holeTO - 247 - 3Tubesi1 channel10 V335 nCenhancement linear l2
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