MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC117N08NS5ATMA1


Infineon Technologies MOSFET N-Ch 80V 49A TDSON-8
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Infineon 9700
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AUD 0.8744
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49 A80 V16.3 mOhmsN - Channel 2.2 V- 55 C+ 150 C50 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V15 nCEnhancement Optimos
IPB090N06N3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
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Infineon 5820
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AUD 0.9296
Multiples of: 1000

            Optimos 3      
MCAC1D4N04YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 4850
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AUD 0.8468
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185 A40 V2.2 mOhmsN - Channel 1.8 V- 55 C+ 150 C83 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V89 nCEnhancement  
BSZ15DC02KDHXTMA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.1/-3.2A; 2.5W
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Infineon 4850
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AUD 0.8532
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            Optimos 2      
BSC0921NDIATMA1


MOSFET N-Ch 30V,30V 40A,40A TISON-8
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Infineon 4850
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AUD 0.8776
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40 A , 40 A30 v , 30 V5 mOhms , 1.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtTISON - 8ReelSi2 Channel20 V8.9 nC , 33 nCEnhancement Optimos
DI115N06PQ


MOSFETs
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Diotec 4850
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AUD 0.8817
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CRTS095N12N


120V 112A 7mO@10V,75A 254W N Channel TO-263-3 MOSFETs ROHS
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CRMICRO 4850
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AUD 0.909
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SI4464DY-T1-E3


N-Channel 200 V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
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Vishay 4850
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AUD 0.9657
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
TSM60NC980CP ROG


MOSFETs 600V, 4A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 0.9249
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4 A600 V980 mOhmsN - Channel 5 V- 55 C+ 150 C57 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V11 nCEnhancement  
BSC026N02KSGAUMA1


Transistor: N-MOSFET; unipolar; 20V; 100A; 78W; PG-TDSON-8
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Infineon 4850
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AUD 0.9403
Multiples of: 5000

            Optimos 2      
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