MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC057N08NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 11265
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AUD 1.297
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100 A80 V4.7 mOhmsN - Channel 2 V- 55 C+ 150 C114 WSmd/SmtTDSON - 8ReelSi1 Channel20 V56 nCEnhancement Optimos
HP8KE7TB1


MOSFETs 100V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE7 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4597
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AUD 2.1836
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24 A100 V27.8 mOhmsN - Channel 2.5 V- 55 C+ 150 C26 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V19.8 nCEnhancement  
BSC440N10NS3 G


Infineon Technologies MOSFET N-Ch 100V 18A TDSON-8 OptiMOS 3
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Infineon 4596
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AUD 0.4712
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5.3 A100 V44 mOhmsN - Channel  - 55 C+ 150 C29 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
IQE013N04LM6ATMA1


40V 1.35mO@20A,10V N Channel TSON-8-4 MOSFETs ROHS
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Infineon 4596
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AUD 1.4037
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           Cut Tape       
BSC0500NSIATMA1


MOSFET LV POWER MOS
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Infineon 4592
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AUD 0.8701
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         Smd/SmtTDSON - 8Cut TapeSi     Optimos
SI2318


SOT-23 MOSFETs ROHS
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HXY MOS 4588
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AUD 0.0515
Multiples of: 10

                   
WST02P06


SOT-23-3L MOSFETs ROHS
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Winsok 4588
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AUD 0.145
Multiples of: 5

                   
PSMN1R0-25YLDX


MOSFET PSMN1R0-25YLD/LFPAK/REEL 7" Q1
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Nexperia 4484
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AUD 1.1312
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100 A25 V890 uOhmsN - Channel 1.2 V- 55 C+ 175 C160 WSmd/SmtLFPAK56 - 5ReelSi1 Channel10 V71.8 nCEnhancement  
DMN5010VAK-7


Trans MOSFET N-CH 50V 0.28A Automotive 6-Pin SOT-563 T/R
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Diodes Incorporated 4467
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AUD 0.1428
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280 mA50 V2 OhmsN - Channel  - 55 C+ 150 C150 mWSmd/SmtSOT - 563 - 6Tape And ReelSi2 Channel12 V Enhancement  
PSMN019-100YLX


MOSFET PSMN019-100YL/LFPAK/REEL 7" Q1
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Nexperia 3685
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AUD 0.7618
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56 A100 V14 mOhmsN - Channel 1.4 V- 55 C+ 175 C167 WSmd/SmtLFPAK56 - 5ReelSi1 Channel20 V72.4 nCEnhancement  
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