MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ035N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
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Infineon 4850
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AUD 0.681
Multiples of: 5000

            optimos 3      
FDZ1323NZ


MOSFET 20V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET
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ON Semiconductor 4850
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AUD 0.7424
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10 A20 V13 mOhmsn - channel12 V0.9 V- 55 C+ 150 C2 Wsmd/smtWLCSP - 6 1.3X2.3Reelsi1 channel12 V17 nC  powertrench
HYG011N04LS1C2


40V 165A 1.1mΩ@10V,40A 75W 1.8V@250uA 58pF@25V N Channel 5876pF@25V 41nC@4.5V -55℃~+175℃@(Tj) DFN5x6-8 MOSFETs ROHS
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HuaYi 4850
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AUD 0.7549
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IAUZ40N06S5L050ATMA1


MOSFET MOSFET_)40V 60V)
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Infineon 4850
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AUD 0.763
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40 A60 V5 mOhmsN - Channel 2.2 V- 55 C+ 175 C71 WSMD/SMT Reel , Cut TapeSi1 Channel- 16 V , + 16 V28 nCEnhancement  
TQM240NH10CR RLG


MOSFETs 100V, 34A, Single N-Channel Automotive MOSFETs
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Taiwan Semiconductor 4850
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AUD 0.7322
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34 A100 V24 mOhmsN - Channel 3.6 V- 55 C+ 175 C63 WSMD/SMTPDFN56UReel , Cut TapeSi1 Channel+ 20 V6 nCEnhancementAEC - Q101PerFET
TSM250NB06DCR RLG


MOSFET Dual N-Chan Pwr MOSFET 60V 30A 25mu
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Taiwan Semiconductor 4850
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AUD 0.7322
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BSZ018NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4850
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AUD 0.7687
Multiples of: 5000

            Optimos      
BSZ900N20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8
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Infineon 4850
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AUD 0.7836
Multiples of: 5000

            Optimos 3      
ISZ028N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Infineon 4830
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AUD 0.6764
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128 A30 V2.8 mOhmsN - Channel 2.35 V- 55 C+ 175 C83 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V27 nCEnhancement StrongIRFET
BSZ035N03LS G


Infineon Technologies MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
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Infineon 4634
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AUD 0.6649
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40 A30 V3.5 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V Enhancement Optimos
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