MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMFS4937NCT3G


N-Channel 30 V 10.2A (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)
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ON Semiconductor 4850
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AUD 0.5007
Multiples of: 1

17.1 A30 V4 mOhmsn - channel    2.6 Wsmd/smtSO - 8FLReel       
STS8N6LF6AG


MOSFET Automotive-grade N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package
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STMicroelectronics 4850
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AUD 0.5
Multiples of: 2500

8 A60 V21 mOhmsN - Channel 1 V- 55 C+ 175 C3.2 WSmd/SmtSOIC - 8 Si1 Channel20 V27 nCEnhancementAec - Q101Stripfet
ZXMN10A08GTA


MOSFET 100V N-Channel 2A MOSFET
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Diodes Incorporated 4850
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AUD 0.4851
Multiples of: 1000

2.9 A100 V250 mOhmsN - Channel 2 V- 55 C+ 150 C2 WSmd/SmtSOT - 223ReelSi1 Channel10 V7.7 nCEnhancement  
BSC0906NSATMA1


Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
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Infineon 4850
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AUD 0.5224
Multiples of: 5000

   N Channel               
BSZ100N03MS G


MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
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Infineon 4850
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AUD 0.5002
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40 A30 V7.3 mOhmsN - Channel 1 V- 55 C+ 150 C30 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V23 nCEnhancement Optimos
NDF04N60ZH


N-Channel 600 V 4.8A (Tc) 30W (Tc) Through Hole TO-220-2 Full Pack
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ON Semiconductor 4850
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AUD 0.5157
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   n - channel  - 55 C+ 150 C through hole         
BSC030N03MS G


MOSFET OptiMOS 3 M-Series PWR-MOSFET 30V 100A
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Infineon 4850
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AUD 0.5418
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100 A30 V2.5 mOhmsN - Channel 1 V- 55 C+ 150 C69 WSmd/SmtTDSONReelSi1 Channel20 V73 nCEnhancement Optimos
FDD7N20TM


MOSFET 200V N-CH MOSFET
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ON Semiconductor 4850
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AUD 0.5597
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5 A200 V690 mOhmsN - Channel  - 55 C+ 150 C43 WSmd/SmtDPAKReelSi1 Channel30 V Enhancement  
ISZ033N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Infineon 4850
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AUD 0.5217
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109 A30 V3.3 mOhmsN - Channel 2.35 V- 55 C+ 175 C71 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V21 nCEnhancement StrongIRFET
BSC057N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 71A; 45W; PG-TDSON-8
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Infineon 4850
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AUD 0.572
Multiples of: 1

            optimos 3      
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