MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138


SOT-23 MOSFETs ROHS
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TECH PUBLIC 5286
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AUD 0.0176
Multiples of: 50

                   
PSMN1R5-30BLEJ


MOSFET N-channel 30 V 1.5 mo FET
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Nexperia 5286
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AUD 4.4
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120 A30 V1.3 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C401 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V228 nCEnhancement  
STP80NF12


Transistor: N-MOSFET; unipolar; 120V; 60A; 300W; TO220-3
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STMicroelectronics 5284
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AUD 1.8093
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RTR030P02HZGTL


MOSFET PCH -20V -3A SMALL SIGNAL MOSF
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ROHM 5280
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AUD 0.506
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3 A20 V75 mOhmsP - Channel - 2 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel12 V9.3 nCEnhancementAec - Q101 
BSC0302LSATMA1


120V 8mO@50A,10V 156W null TDSON-8 MOSFETs ROHS
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Infineon 5278
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AUD 1.5728
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99 A120 V8 mOhmsN - Channel 2.4 V- 55 C+ 150 C156 WSMD/SMTTDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V79 nCEnhancement  
DMP1245UFCL-7


P-Channel 12 V 6.6A (Ta) 613mW (Ta) Surface Mount X1-DFN1616-6 (Type E)
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Diodes Incorporated 5276
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AUD 0.3422
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6.6 A12 V25 mOhmsP - Channel  - 55 C+ 150 C613 mWSmd/SmtX1 - DFN1616 - 6ReelSi1 Channel8 V Enhancement  
DMTH10H025LK3Q-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 5271
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AUD 0.6967
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51.7 A100 V22 mOhmsN - Channel 1 V- 55 C+ 175 C100 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V21 nCEnhancementAec - Q101 
BUK7227-100B,118


N-Channel 100 V 48A (Tc) 167W (Tc) Surface Mount DPAK
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Nexperia 5270
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AUD 1.7335
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48 A100 V27 mOhmsN - Channel  - 55 C+ 185 C167 WSmd/SmtSOT - 428ReelSi1 Channel20 V Enhancement  
IRFR5505TRPBF


MOSFET P Trench 55V 18A 4V @ 250uA 110 mΩ @ 9.6A,10V TO-252-2 (DPAK) RoHS
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Infineon 4996
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AUD 0.3405
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18 A55 V110 mOhmsP - Channel 4 V- 55 C+ 150 C57 WSmd/SmtDPAKReelSi1 Channel20 V32 nCEnhancement  
IRFP4668PBF


MOSFET N Trench 200V 130A 5V @ 250uA 9.7 mΩ @ 81A,10V TO-247 (AC) RoHS
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Infineon 1781
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AUD 2.0565
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
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