MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC018NE2LSIATMA1


Transistor: N-MOSFET; unipolar; 25V; 29A; 69W; PG-TDSON-8
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Infineon 4850
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AUD 0.1985
Multiples of: 5000

            Optimos      
SCH1439-TL-W


MOSFET NCH 4V DRIVE SERIES
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ON Semiconductor 4850
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AUD 0.2109
Multiples of: 1

3.5 A30 V128 mOhmsN - Channel 1.2 V + 150 C1 WSmd/SmtSOT - 563 - 6ReelSi1 Channel+/- 20 V5.6 nCEnhancement  
SIRA26DP-T1-RE3


MOSFET 25V Vds 16V Vgs PowerPAK SO-8
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Vishay 4850
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AUD 0.2274
Multiples of: 1

30.3 A25 V2.15 mOhmsN - Channel 2.5 V- 55 C+ 150 C43.1 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel10 V29 nCEnhancement Trenchfet, Powerpak
DMN4040SK3-13


MOSFET 40V N-Ch Enh Mode 30mOhm 10V 13.8A
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Diodes Incorporated 4850
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AUD 0.2901
Multiples of: 2500

6 A40 V30 mOhmsN - Channel 1.8 V- 55 C+ 150 C8.9 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V18.6 nCEnhancement  
DMP3028LK3-13


Diodes Incorporated MOSFET P-Ch Enh Mode -30V Low Rdson -20Vgss
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Diodes Incorporated 4850
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AUD 0.2851
Multiples of: 2500

- 27 A- 30 V20 mOhmsP - Channel - 1 V- 55 C+ 150 C2.8 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V22 nCEnhancement  
BSZ130N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4850
Ships to you
between Fri. 10 Jul to Thu. 16 Jul Calender.png

AUD 0.3545
Multiples of: 5000

            Optimos 3      
TSM1NB60CP ROG


MOSFET 600V 1A Single N-Cha nnel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 0.4006
Multiples of: 1

1 A600 V8 OhmsN - Channel 2.5 V- 55 C+ 150 C39 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V6.1 nCEnhancement  
NCE0110K


MOSFET N Trench 100V 9.6A 2.5V @ 250uA 140 mΩ @ 6A,10V TO-252-2 (DPAK) RoHS
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NCE Power 4848
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AUD 0.2124
Multiples of: 2

                   
SKQ14N15AD


PDFN(5x6) MOSFETs ROHS
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Shikues 4845
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AUD 0.2275
Multiples of: 5

                   
HY1603C2


30V 60A 35.7W 4.1mΩ@10V,20A 1.3V@250uA 158pF@25V N Channel 2312pF@25V 52nC@10V -55℃~+150℃@(Tj) PPAK5x6-8L MOSFETs ROHS
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HuaYi 4840
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AUD 0.2059
Multiples of: 5

                   
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