MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7000BU


MOSFET 60V N-Channel Sm Sig
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ON Semiconductor 5405
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AUD 0.1442
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   N - Channel  - 55 C+ 150 C Through HoleTO - 92Bulk       
RRR040P03HZGTL


P-Channel 30V 4A (Ta) 700mW (Ta) Surface Mount TSMT3
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ROHM 5404
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AUD 0.4784
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4 A30 V45 mOhmsP - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSOT - 346T - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.5 nCEnhancementAEC - Q101 
PJA3412-AU_R1_000A1


MOSFET 20V N-Channel Enhancement Mode MOSFET
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Panjit 5400
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AUD 0.1013
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4.1 A20 V56 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V4.6 nCEnhancementAEC - Q101 
DMN2040LTS-13


Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6.7A (Ta) 890mW Surface Mount 8-TSSOP
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Diodes Incorporated 5399
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AUD 0.2287
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6.7 A20 V19 mOhmsN - Channel 500 mV- 55 C+ 150 C890 mWSmd/SmtTSSOP - 8LReelSi2 Channel12 V5.2 nC , 5.2 nCEnhancement  
SISS176LDN-T1-UE3


MOSFETs N-CHANNEL 70-V (D-S) MOSFET
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Vishay 5399
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AUD 0.5448
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42.3 A70 V10.9 mOhmsN - Channel 1.6 V- 55 C+ 150 C39 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 12 V , + 12 V12.6 nCEnhancement TrenchFET
SIR514DP-T1-BE3


MOSFETs N-Channel 100 V (D-S) MOSFET 150 C 5.8 m 10V
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Vishay 5399
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AUD 1.3898
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84.8 A100 V5.8 mOhmsN - Channel 4 V- 55 C+ 150 C83.3 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31 nCEnhancement  
ZVP3310A


P-Channel 100 V 140mA (Ta) 625mW (Ta) Through Hole TO-92
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Diodes Incorporated 5396
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AUD 0.4592
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140 mA100 V20 OhmsP - Channel 1.5 V- 55 C+ 150 C625 mWThrough HoleTO - 92BulkSi1 Channel- 10 V Enhancement  
IPD90N04S4-03


Infineon Technologies MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 5394
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AUD 0.8398
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90 A40 V3.2 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V66 nCEnhancementAec - Q101Optimos
2SK669K-AC


VERY HIGH-SPEED SWITCH,ANALOG SWITCH APPLICATIONS
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ON Semiconductor 5393
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AUD 0.2448
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NDS352AP


SOT-23 MOSFETs ROHS
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TECH PUBLIC 5390
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AUD 0.0833
Multiples of: 5

                   
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