MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMS6004N8-13


MOSFET 60V N-Ch Enh FET 500mOhm 1.3A 120mJ
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Diodes Incorporated 5421
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AUD 0.3475
Multiples of: 1

1.3 A60 V600 mOhmsN - Channel -- 40 C+ 150 C1.28 WSmd/SmtSO - 8ReelSi1 Channel- Enhancement Intellifet
SIR5102DP-T1-RE3


MOSFETs N-CHANNEL 100-V (D-S)
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Vishay 5419
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AUD 2.1476
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           Reel , Cut TapeSi      
STW11NM80


MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
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STMicroelectronics 5417
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AUD 4.4504
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   n - channel  - 65 C+ 150 C through holeTO - 247Tube       
IPP320N20N3GXKSA1


Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
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Infineon 5412
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AUD 1.9381
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            Optimos 3      
SMF5N60


600V 5A 35W 2.5O@10V,2.5A N Channel TO-220F-3 MOSFETs ROHS
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HUAKE 5411
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AUD 0.2013
Multiples of: 5

                   
APG046N01G


PDFN-8L(5x6) MOSFETs ROHS
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Quan Li 5409
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AUD 1.1598
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SI3429EDV-T1-GE3


MOSFET P-Channel 20-V (D-S)
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Vishay 5407
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AUD 0.2132
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   P - Channel     Smd/SmtTSOP - 6ReelSi1 Channel    Trenchfet
ISC073N12LM6ATMA1


MOSFETs N
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Infineon 5407
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AUD 2.0677
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86 A120 V7.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C125 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.4 nCEnhancement OptiMOS
CSD25485F5


MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 5406
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AUD 0.2148
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- 3.2 A- 20 V29.7 mOhmsP - Channel - 1.3 V- 55 C+ 150 C1.4 WSmd/SmtPICOSTAR - 3ReelSi1 Channel- 12 V3.5 nCEnhancement Picostar
DMN66D0LT-7


60V 115mA 200mW 5O@10V,115mA N Channel SOT-523 MOSFETs ROHS
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Diodes Incorporated 5405
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AUD 0.0559
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115 mA60 V6 OhmsN - Channel 2 V- 55 C+ 150 C200 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel20 V Enhancement  
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