MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSD221N06TL


ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 22A
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ROHM 4964
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AUD 1.3674
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22 A60 V26 mOhmsN - Channel     Smd/SmtCPT - 3ReelSi1 Channel     
SSM6N44FE,LM


Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount ES6
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Toshiba 4961
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AUD 0.0929
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100 mA30 V4 Ohmsn - channel 1.5 V  150 mWsmd/smtSOT - 563 - 6Reelsi2 channel     
FDMS8880


Fairchild Semiconductor MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 4959
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AUD 0.5616
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13.5 A30 V8.5 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V Enhancement Powertrench
IXTH30N60L2


MOSFET 30 Amps 600V
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IXYS 4959
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AUD 23.3134
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30 A600 V240 mOhmsn - channel 2.5 V- 55 C+ 150 C540 Wthrough holeTO - 247 - 3Tubesi1 channel10 V335 nCenhancement linear l2
DMG6898LSDQ-13


MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss
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Diodes Incorporated 4957
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AUD 0.5549
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9.5 A , 9.5 A20 v , 20 V11 mOhms , 11 mOhmsN - Channel 500 mV , 500 mV- 55 C+ 150 C1.28 WSmd/SmtSO - 8ReelSi2 Channel+/- 12 v , +/- 12 V26 nC , 26 nCEnhancementAec - Q101 
STC6301D


60V 34.7W 2.5V@250uA 1PCSNChannel+1PCSPChannel TO-252-4 MOSFETs ROHS
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STANSON Tech 4908
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AUD 0.2382
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SI2302


20V 2.3A 90m@4.5V,2.8A 400mW 700mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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Juxing Electronic Technology 4908
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AUD 0.0183
Multiples of: 20

                   
WST2301


20V 2.9A 100mO@4.5V,2A 1W P Channel SOT-23N MOSFETs ROHS
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Winsok 4592
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AUD 0.0139
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Si4401FDY-T1-GE3


MOSFET -40V Vds 20V Vgs SO-8
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Vishay 3902
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AUD 0.5495
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14 A40 V14.2 mOhmsP - Channel 1 V- 55 C+ 150 C3.2 WSmd/SmtSO - 8Cut TapeSi1 Channel- 10 V66 nCEnhancement  
LGE2305


Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23
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Luguang 2032
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AUD 0.0815
Multiples of: 5

                   
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