MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2305


MOSFET P Trench 20V 4.2A 500mV @ 250uA（Min） 65 mΩ @ 4.2A,4.5V SOT23-3 RoHS
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KEXIN 4885
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AUD 0.0312
Multiples of: 20

                   
HXY2302AI


20V 3A 45mΩ@4.5V,2.8A N Channel SOT-23 MOSFETs ROHS
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HXY MOS 4883
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AUD 0.0189
Multiples of: 20

                   
AO7800


MOSFET 2 N Channel (Dual) 20V 900mA 900mV @ 250uA 300 mΩ @ 900mA,4.5V SC-70-6L RoHS
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Alpha & Omega 4883
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AUD 0.163
Multiples of: 1

                   
SSM6J50TU,LF


Field Effect Transistor Silicon Single P-Channel MOS Type -20V -2.5A 64m Ohm 6-Pin UF T/R
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Toshiba 4881
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AUD 0.1731
Multiples of: 1

2.5 A20 V64 mOhmsP - Channel 1.2 V + 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel10 V Enhancement  
IPL60R365P7AUMA1


Transistor: N-MOSFET; unipolar; 600V; 6A; 46W; PG-VSON-4
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Infineon 4881
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AUD 1.1591
Multiples of: 1

            Coolmos P7      
TW2203FL-Y


DFN3x3-8L MOSFETs ROHS
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TWGMC 4879
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AUD 0.1649
Multiples of: 1

                   
BSP92P


SOT-223 MOSFETs ROHS
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TECH PUBLIC 4879
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AUD 0.249
Multiples of: 5

                   
IRFR024TRPBF-BE3


N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 4873
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AUD 1.3558
Multiples of: 1

14 A60 V100 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V25 nCEnhancement  
FDN338P


MOSFET P Channel 20V 3A 1V @ 250uA 100mO @ 3A,4.5V SOT-23-3 RoHS
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HUASHUO 4869
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AUD 0.0445
Multiples of: 10

                   
DMN62D0SFD-7


Diodes Incorporated MOSFET MOSFET BVDSS
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Diodes Incorporated 2910
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AUD 0.0989
Multiples of: 3000

540 mA60 V2 OhmsN - Channel 1.6 V- 55 C+ 150 C0.89 WSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel20 V0.87 nCEnhancement  
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