MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM5N15FE(TE85L,F)


N-Channel 30 V 100mA (Ta) 150mW (Ta) Surface Mount ESV
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Toshiba 4979
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AUD 0.0971
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100 mA30 V4 OhmsN - Channel 1.5 V  150 mWSmd/SmtSOT - 553 - 5ReelSi2 Channel     
TSM260P02CX RFG


MOSFET MOSFET, Single P-Ch, -20V, -6.5A
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Taiwan Semiconductor 4979
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AUD 0.8346
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6.5 A20 V21 mOhmsP - Channel 300 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V19.5 nCEnhancement  
NDS351N-TP


30V 2A 900mW 90m@10V,2A 1.5V@250uA SOT-23 MOSFETs ROHS
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TECH PUBLIC 4976
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AUD 0.0478
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R6009RND3TL1


MOSFETs TO252 650V 27A N-CH MOSFET
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ROHM 4975
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AUD 1.1157
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9 A600 V665 mOhmsN - Channel 7 V- 55 C+ 150 C125 WSMD/SMTDPAK - 3 (TO - 252 - 3)ReelSi1 Channel- 30 V , + 30 V22 nCEnhancement  
WST3427


20V 2.5A 140mO@4.5V,2A 1W P Channel SOT-23N MOSFETs ROHS
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Winsok 4966
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AUD 0.0441
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BSS126IXTSA1


N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount PG-SOT23-3-5
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Infineon 4952
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AUD 0.0821
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          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
S60J04F


40V 40A 6.9mΩ 3V 2 N-Channel PDFN-8L(5x6) MOSFETs ROHS
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HL 4845
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AUD 0.1594
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AP040N03G


MOSFET N Channel 30V 80A(Tc) 3V @ 250uA 4.2mO @ 30A,10V DFN5*6 RoHS
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Quan Li 4738
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AUD 0.4352
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IAUTN12S5N018TATMA1


MOSFETs N
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Infineon 4221
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AUD 5.9925
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           Reel , Cut TapeSi    AEC - Q101OptiMOS
SI7465DP-T1-GE3


MOSFET 60V 5.0A 3.5W 64mohm @ 10V
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Vishay 3988
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AUD 0.5847
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3.2 A60 V64 mOhmsP - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V26 nCEnhancement Trenchfet
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