MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84


50V 130mA 200mW 10Ω@5V,100mA 2.5V@250uA P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 4898
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AUD 0.0121
Multiples of: 50

                   
KIA2302


MOSFET N Trench 20V 3A 1.2V @ 50uA 72 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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KIA 4898
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AUD 0.0411
Multiples of: 10

                   
SSM3J56MFV,L3F


MOSFET Small Signal MOSFET
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Toshiba 4898
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AUD 0.0502
Multiples of: 10

- 800 mA- 20 V4 OhmsP - Channel - 300 mV + 150 C800 mWSmd/SmtSOT - 723 - 3ReelSi1 Channel+/- 8 V1.6 nCEnhancement  
IRFRC20TRLPBF-BE3


MOSFET 600V N-CH
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Vishay 4896
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AUD 1.2514
Multiples of: 1

2 A600 V4.4 OhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V18 nCEnhancement  
STD100N10F7


STMicroelectronics MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 120W
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STMicroelectronics 4895
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AUD 0.9871
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80 A100 V8 mOhmsN - Channel  - 55 C+ 175 C120 WSmd/SmtDPAK - 3ReelSi1 Channel 56 nC  Stripfet
ZVN4424ASTZ


Diodes Incorporated MOSFET N-Chnl 240V
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Diodes Incorporated 4891
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AUD 0.6912
Multiples of: 1

260 mA240 V6 OhmsN - channel40 V - 55 C+ 150 C750 mWThrough_HoleTO - 92 - 3BulkSi1 Channel40 V Enhancement  
BSP295 H6327


Infineon Technologies MOSFET N-Ch 60V 1.8A SOT-223-3
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Infineon 4884
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AUD 0.4252
Multiples of: 1

1.8 A60 V300 mOhmsN - Channel 1.1 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V14 nCEnhancement  
1N65G-AA3-R


MOSFET N Channel 650V 1.2A(Tc) 4V @ 250uA 12.5O @ 600mA,10V SOT-223 RoHS
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Unisonic 4835
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AUD 0.132
Multiples of: 5

                   
BSS138


SOT-23 MOSFETs ROHS
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Bourne 3938
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AUD 0.0191
Multiples of: 10

                   
MMBT7002K 72K


SOT-23 MOSFETs ROHS
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Hong Kong Chuangji 2056
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AUD 0.0161
Multiples of: 20

                   
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