MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJAC70P06


PDFNWB5x6-8L MOSFETs ROHS
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Changjing Electronics Technology 15113
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AUD 0.915
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SIZ340DT-T1-GE3


Mosfet Array 2 N-Channel (Half Bridge) 30V 30A, 40A 16.7W, 31W Surface Mount 8-Power33 (3x3)
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Vishay 8822
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AUD 0.6551
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30 A30 V9.5 mOhmsN - Channel20 V2.4 V- 55 C+ 150 C16.7 WSmd/SmtPowerpair - 8ReelSi  12.3 nCEnhancement Trenchfet
ISZ173N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 5024
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AUD 1.6971
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48 A150 V17.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C94 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.8 nCEnhancement  
MGSF1N02LT1


Trans MOSFET N-CH 20V 0.75A 3-Pin SOT-23 T/R
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ON Semiconductor 5023
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AUD 3.389
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DMP1555UFA-7B


MOSFET 12 P-Ch Enh FET 8 VGS 55.4pF 0.84nC
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Diodes Incorporated 5019
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AUD 0.0887
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20 mA12 V800 mOhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtX2 - DFN0806 - 3Cut TapeSi1 Channel8 V840 pCEnhancement  
SI7972DP-T1-GE3


MOSFET Dual N-Ch 30V Vds 7.1nC Qg Typ
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Vishay 5013
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AUD 0.7461
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8 A60 V18 mOhmsN - Channel 2.7 V- 55 C+ 150 C22 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V15.2 nCEnhancement  
TSM3443CX6 RFG


MOSFET -20V -4.7A Single P- Channel Power MOSFE
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Taiwan Semiconductor 5011
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AUD 0.241
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15 A20 V48 mOhmsP - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel4.5 V6 nCEnhancement  
SI4840BDY-T1-E3


N-Channel 40 V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
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Vishay 4587
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AUD 1.0606
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19 A40 V9 mOhmsN - Channel 1 V- 55 C+ 150 C6 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V33 nCEnhancement Trenchfet
BSC072N08NS5-TP


PDFN-8L(5x6) MOSFETs ROHS
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TECH PUBLIC 4470
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AUD 1.082
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CMUDM7004 TR


MOSFET SMD-Small Signal N-Channel Mosfet
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Central Semiconductor 2101
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AUD 0.3382
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450 mA30 V280 mOhmsN - channel 500 mV- 65 C+ 150 C250 mWSmd/smtSOT - 523ReelSi1 Channel8 V792 pCEnhancement Ultramini
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