MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7413TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 5562
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AUD 0.1753
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SI2301


SOT-23 MOSFETs ROHS
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Shenzhen JingYang 5556
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AUD 0.0449
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DN2450N8-G


Transistor: N-MOSFET; unipolar; 500V; 0.7A; 1.6W; SOT89-3
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Microchip 5554
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AUD 1.1122
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IQDH45N04LM6CGSCATMA1


MOSFETs TRENCH <= 40V
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Infineon 5554
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AUD 3.3
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611 A40 V490 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMTPG - WHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V62 nCEnhancement OptiMOS
SI2301DS-ES


20V 3A 1W 57m@4.5V,3A 700mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 5553
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AUD 0.0162
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ISC036N04NM5ATMA1


40V 3.6mO@49A,10V N Channel TDSON-8-FL MOSFETs ROHS
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Infineon 5552
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AUD 0.571
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98 A40 V3.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C63 WSMD/SMTTDSON - FL - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V21 nCEnhancement  
WST6004


20V 0.6A 140mΩ@4.5V,0.6A 175mW N Channel SC-75(SOT-523) MOSFETs ROHS
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Winsok 5547
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AUD 0.0899
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BSD235N H6327


Infineon Technologies MOSFET N-Ch 20V 950mA SOT-363-6
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Infineon 5547
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AUD 0.1117
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950 mA , 950 mA20 v , 20 V600 mOhms , 600 mOhmsN - Channel 950 mV- 55 C+ 150 C500 mWSmd/SmtPG - SOT - 363Reel-1 Channel+/- 12 V320 pCEnhancementAec - Q101 
EM6K7T2R


Mosfet Array 2 N-Channel (Dual) 20V 200mA 150mW Surface Mount EMT6
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ROHM 5509
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AUD 0.1022
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200 mA20 V800 mOhmsN - Channel8 V - 55 C+ 150 C150 mWSmd/SmtEMT - 6Reel    Enhancement  
IRF3415STRLPBF


MOSFET N Trench 150V 43A (Tc) 4V @ 250uA 42 mΩ @ 22A,10V TO-263-2 RoHS
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Infineon 5410
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AUD 1.6517
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43 A150 V42 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel20 V133.3 nC   
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