MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDN5632N_F085


Fairchild Semiconductor MOSFET Trans MOS N-Ch 60V 1.7A
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ON Semiconductor 5044
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AUD 0.5729
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1.6 A60 V98 mOhmsN - Channel  - 55 C+ 150 C1.1 WSmd/SmtSSOT - 3ReelSi1 Channel20 V Enhancement Ultrafet
DMP3007SFG-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 5041
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AUD 0.5139
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         Smd/SmtPowerdi3333 - 8Cut TapeSi      
NTNS0K8N021ZTCG


N-Channel 20 V 220mA (Ta) 125mW (Ta) Surface Mount 3-XDFN (0.42x0.62)
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ON Semiconductor 5035
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AUD 0.3965
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220 mA20 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C125 mWSMD/SMTXDFN - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V-Enhancement  
PSMQC078N10LS2_R2_00201


MOSFETs 100V 7.8m ohms Excellect low FOM MOSFET for PD3.0 65W solution
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Panjit 5033
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AUD 0.9397
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63 A100 V7.8 mOhmsN - Channel 2.3 V- 55 C+ 150 C65 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement  
IAUCN10S5L094DATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 5028
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AUD 1.6186
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           Reel , Cut TapeSi     OptiMOS
AO3401PSA


SOT-23 MOSFETs ROHS
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DOWO 4995
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AUD 0.0431
Multiples of: 10

                   
IAUC120N04S6L008ATMA1


Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm:480A
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Infineon 4753
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AUD 1.6795
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            Optimos 6      
HYG065N07NS1D


70V 70A 6mΩ@10V,40A 62.5W 3V@250uA 21pF@25V N Channel 2.908nF@25V 52nC@10V -55℃~+175℃@(Tj) TO-252-2L MOSFETs ROHS
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HuaYi 4748
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AUD 0.297
Multiples of: 5

                   
AGM14N10AP


100V 40A 12m@10V,20A 68W 1.6V@250uA 1PCSNChannel PDFN3.3x3.3 MOSFETs ROHS
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AGM-Semi 3977
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AUD 0.2887
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DMP2066LDM-7


P-Channel 20 V 4.6A (Ta) 1.25W (Ta) Surface Mount SOT-26
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Diodes Incorporated 3907
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AUD 0.2216
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4.6 A20 V40 mOhmsp - channel  - 55 C+ 150 C1.25 Wsmd/smtSOT - 26 - 6Cut Tapesi1 channel12 V enhancement  
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