MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HT8KE6TB1


MOSFETs 100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 5622
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AUD 1.1751
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13 A100 V83 mOhmsN - Channel 2.5 V- 55 C+ 150 C14 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V6.7 nCEnhancement  
DMN61D8LVT-7


Diodes Incorporated MOSFET 60V N-Ch Enh FET 20Vgss TSOT26
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Diodes Incorporated 5621
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AUD 0.2794
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630 mA , 630 mA60 v , 60 V2.4 Ohms , 2.4 OhmsN - Channel 1.3 v , 1.3 V- 55 C+ 150 C820 mWSmd/SmtTSOT - 26 - 6ReelSi2 Channel+/- 12 V0.74 nC , 0.74 nCEnhancement  
ISC019N04NM5ATMA1


40V 1.9mO@50A,10V N Channel TDSON-8-FL MOSFETs ROHS
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Infineon 5620
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AUD 0.5675
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170 A40 V1.9 mOhmsN - Channel 2.2 V- 55 C+ 175 C100 WSMD/SMTTDSON - FL - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V42 nCEnhancement  
NX3020NAKW.115


Transistor: N-MOSFET; unipolar; 30V; 0.11A; 300mW; SOT323
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Nexperia 5616
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AUD 0.1044
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SiR108DP-T1-RE3


MOSFET 100V Vds 20V Vgs PowerPAK SO-8
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Vishay 5616
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AUD 0.5498
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45 A100 V13.5 mOhmsN - Channel 2 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V41.5 nCEnhancement  
Hot TP2104N3-G


Transistor: P-MOSFET; unipolar; -40V; -0.6A; 740mW; TO92
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Microchip 5615
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AUD 0.6427
Multiples of: 50

175 mA40 V10 OhmsP - Channel 1 V- 55 C+ 150 C740 mWThrough HoleTO - 92BulkSi1 Channel- 4.5 V Enhancement  
MMFTP3008AK


MOSFETs
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Diotec 5614
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AUD 0.0321
Multiples of: 1

                   
FDS8896


N-Channel 30 V 15A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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ON Semiconductor 5613
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AUD 0.5369
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16 A30 V6 mOhmsn - channel20 V - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel20 V enhancement powertrench
SIR5110DP-T1-RE3


MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 12.5 m a. 10V 12.3 m a. 7.5V
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Vishay 5613
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AUD 1.3287
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47.6 A100 V12.5 mOhmsN - Channel 4 V- 55 C+ 150 C59.5 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.8 nCEnhancement  
SI4816BDY


SOP-8 MOSFETs ROHS
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TECH PUBLIC 5612
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AUD 1.0106
Multiples of: 1

                   
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