MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRL100HS121


Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
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Infineon 7958
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AUD 0.4039
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            Optimos 5      
DMPH6023SK3-13


MOSFET MOSFETBVDSS: 41V-60V
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Diodes Incorporated 6705
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AUD 0.591
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35 A60 V33 mOhmsP - Channel 3 V- 55 C+ 175 C3.2 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V53.1 nCEnhancement  
2N7002K-T1-E3


MOSFET 60V Vds 20V Vgs SOT-23
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Vishay 5208
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AUD 0.0723
Multiples of: 10

300 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.6 nCEnhancement  
WST3427


20V 2.5A 140mO@4.5V,2A 1W P Channel SOT-23N MOSFETs ROHS
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Winsok 4976
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AUD 0.0441
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SIA471DJ-T1-GE3


MOSFET Pch 30V Vds 20V Vgs PowerPAK SC-70-6L
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Vishay 4963
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AUD 0.359
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- 30.3 A- 30 V11.5 mOhmsP - Channel - 2.5 V- 55 C+ 150 C Smd/SmtPOWERPAK SC - 70Cut TapeSi1 Channel20 V18.5 nCEnhancement  
SIR873DP-T1-GE3


TrenchFET Gen IV Power MOSFET P-Channel Single -150V VDS ±20V VGS -29A ID 8-Pin PowerPAK SOIC T/R
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Vishay 4960
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AUD 1.3185
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37 A150 V39.5 mOhmsP - Channel 4 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V25 nC  Trenchfet, Powerpak
MSK30N03DF


30V 30A 12mΩ@10V,10A 20W 2.5V@250uA 65pF@15V N Channel 572pF@15V 7.2nC@4.5V -55℃~+150℃@(Tj) DFN3X3-8L MOSFETs ROHS
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MSKSEMI 4959
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AUD 0.3009
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IRF644PBF


N-Channel 250 V 14A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 4956
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AUD 0.9515
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14 A250 V280 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V68 nCEnhancement  
RH6P040BHTB1


MOSFET NCH 100V 40A MOSFET
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ROHM 4847
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AUD 1.2182
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40 A100 V15.6 mOhmsN - Channel 4 V- 55 C+ 150 C59 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V16.7 nCEnhancement  
ZVP4424ASTZ


Diodes Incorporated MOSFET P-Chnl 240V
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Diodes Incorporated 2377
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AUD 0.6994
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- 200 mA- 240 V9 OhmsP - Channel40 V- 2 V- 55 C+ 150 C750 mWThrough HoleTO - 92 - 3BulkSi1 Channel40 V Enhancement  
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