MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RV2C010UNT2L


ROHM Semiconductor MOSFET
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ROHM 6115
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AUD 0.0993
Multiples of: 5

1 A20 V470 mOhmsN - Channel 300 mV- 55 C+ 150 C400 mWSmd/SmtDFN - 1006 - 3ReelSi1 Channel4.5 V Enhancement  
WPM2092A-3/TR


DFN-3L(1x0.6) MOSFETs ROHS
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Will Semiconductor 4976
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AUD 0.0542
Multiples of: 10

                   
PJA3434_R1_00001


MOSFET N Trench 20V 750mA 1V @ 250uA 400 mΩ @ 600mA,4.5V SOT-23 RoHS
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Panjit 4975
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AUD 0.0542
Multiples of: 1

750 mA20 V400 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V1.4 nCEnhancement  
BSC0902NS


MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
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Infineon 4973
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AUD 0.4893
Multiples of: 1

100 A30 V2.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C48 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V35 nCEnhancement Optimos
PXN6R2-25QLJ


25V 6.2mO@13.1A,10V N Channel MLPAK(3.3x3.3) MOSFETs ROHS
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Nexperia 4969
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AUD 0.3119
Multiples of: 1

22.3 A25 V8.5 mOhmsN - Channel 2.2 V- 55 C+ 150 C4.8 WSMD/SMTSOT8002 - 1 - 8 Si1 Channel- 25 V , + 25 V25.5 nCEnhancement  
TN2540N8-G


Transistor: N-MOSFET; unipolar; 400V; 1A; 1.6W; SOT89
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Microchip 4969
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AUD 1.8388
Multiples of: 1

260 mA400 V12 OhmsN - Channel 600 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel10 V Enhancement  
HSBB0210


100V 2.8A 100mΩ@10V,2A 12.5W 2.3V@250uA 2 N-Channel PRPAK(3x3) MOSFETs ROHS
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HUASHUO 4968
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AUD 0.1801
Multiples of: 5

                   
IQE065N10NM5CGATMA1


MOSFET TRENCH >=100V
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Infineon 4967
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AUD 1.8223
Multiples of: 1

85 A100 V6.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C100 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
NVMYS012N10MCLTWG


MOSFETs MOSFET - Power, Single N-Channel 100 V, 12.2 mohm, 52 A
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ON Semiconductor 4966
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AUD 1.0172
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52 A100 V18.3 mOhmsN - Channel 3 V- 55 C+ 175 C72 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancement  
IRFBG20PBF-BE3


N-Channel 1000V 1.4A (Tc) 54W (Tc) Through Hole TO-220AB
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Vishay 4965
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AUD 1.1343
Multiples of: 1

1.4 A1 kV11 OhmsN - Channel 4 V- 55 C+ 150 C54 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V38 nCEnhancement  
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