MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDD86250


Fairchild Semiconductor MOSFET 150V N-Channel PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 14550
Ships to you
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AUD 0.975
Multiples of: 2500

51 A150 V31 mOhmsN - Channel 2 V- 55 C+ 150 C132 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V33 nCEnhancement PowerTrench
FDN304P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 9059
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AUD 0.0425
Multiples of: 10

                   
FDT458P


Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223
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ON Semiconductor 7760
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AUD 0.6903
Multiples of: 4000

            Powertrench®      
SQ1470AEH-T1_GE3


MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified
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Vishay 5820
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AUD 0.3201
Multiples of: 3000

1.7 A30 V45 mOhmsN - Channel 600 mV- 55 C+ 175 C3.3 WSmd/SmtSOT - 363 - 6ReelSi1 Channel12 V5.2 nCEnhancementAec - Q101Trenchfet
WSD40120DN56G


40V 120A 1.4mO@10V,20A 125W N Channel DFN-8(6x4.9) MOSFETs ROHS
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Winsok 5065
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AUD 0.7913
Multiples of: 1

                   
BUK9675-100A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 4962
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AUD 1.0425
Multiples of: 1

23 A100 V72 mOhmsN - Channel  - 55 C+ 175 C98 WSmd/SmtSOT - 404ReelSi1 Channel15 V Enhancement  
BSS138W-TP-MS


55V 300mA 1.2Ω@10V 313mW N Channel SOT-323 MOSFETs ROHS
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MSKSEMI 4869
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AUD 0.0282
Multiples of: 20

                   
TPH3R70APL,L1Q(M


100V 90A 960mW 3.7m@10V,45A 2.5V@1mA 1 N-Channel SOP-8-5.0mm MOSFETs ROHS
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Toshiba 4791
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AUD 1.6025
Multiples of: 1

                   
BSS138NH6327-MS


55V 300mA 350mW 1.2mΩ@10V N Channel SOT-23 MOSFETs ROHS
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MSKSEMI 4636
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AUD 0.0318
Multiples of: 20

                   
CSD18543Q3A


MOSFET 60-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm 8-VSONP -55 to 150
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Texas Instruments 892
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AUD 0.762
Multiples of: 1

12 A60 V12.0 mOhmsN - channel 1.5 V- 55 C+ 150 C66 WSmd/smtVSONP - 8Cut TapeSi1_Channel20 V11.1 nCEnhancement Nexfet
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