MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK6P60W,RVQ


Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
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Toshiba 5611
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AUD 1.746
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6.2 A600 V680 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel30 V12 nCEnhancement  
UPA679TB-T1-A


Trans MOSFET N/P-CH 20V 0.35A/0.25A Automotive 6-Pin SC-88 T/R
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Renesas 5608
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AUD 0.1574
Multiples of: 1

   n/p    0.2 Wsurface mount Tape And Reel    enhancement  
TPM2008EP3


20V 700mA 130mΩ@4.5V,650mA 100mW 750mV@250uA 15pF@16V N Channel 120pF@16V +150℃@(Tj) DFN1006-3L MOSFETs ROHS
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TECH PUBLIC 5607
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AUD 0.0309
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AON7409


30V 50A 8m@10V,30A 38W 1.2V@250uA PDFN-8(3.3x3.3) MOSFETs ROHS
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TECH PUBLIC 5606
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AUD 0.2646
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PSMQC040N08NS2_R2_00201


MOSFETs 80V 4.4m ohms Best-in-Class FOM MOSFET for DC to DC converter
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Panjit 5601
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AUD 1.3602
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102 A80 V4 mOhmsN - Channel 3.8 V- 55 C+ 175 C83 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V36 nCEnhancement  
DMP1011UCB9-7


MOSFET P-Ch Enh Mode FET
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Diodes Incorporated 5599
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AUD 0.4802
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- 10 A- 8 V8.2 mOhmsP - Channel - 1.1 V- 55 C+ 150 C890 mWSmd/SmtUWLB1515 - 9ReelSi1 Channel- 6 V8.1 nCEnhancement  
IRFR3410TRLPBF


N-Channel 100 V 31A (Tc) 3W (Ta), 110W (Tc) Surface Mount D-Pak
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Infineon 5596
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AUD 0.674
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31 A100 V34 mOhmsN - Channel 4 V- 55 C+ 175 C110 WSmd/SmtDPAKReelSi1 Channel20 V37 nC   
NCE2003


SOT-23-6 MOSFETs ROHS
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NCE Power 5592
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AUD 0.0741
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DMN10H120SFG-13


Diodes Incorporated MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
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Diodes Incorporated 5590
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AUD 0.3876
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3.8 A100 V68 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8Tape And ReelSi1 Channel20 V10.6 nCEnhancement  
DMP4025SFG-13


Diodes Incorporated MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A
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Diodes Incorporated 5373
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AUD 0.2931
Multiples of: 5

- 7.2 A- 40 V18 mOhmsP - Channel - 1.8 V- 55 C+ 150 C810 mWSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V33.7 nCEnhancement  
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