MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IQE022N06LM5CGSCATMA1


MOSFETs N
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Infineon 5588
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AUD 2.1785
Multiples of: 1

151 A60 V N - Channel 2.3 V- 55 C+ 175 C SMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V Enhancement OptiMOS
SP2306T2J


SOT-23 MOSFETs ROHS
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Siliup 5587
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AUD 0.0231
Multiples of: 20

                   
2N7002KW


MOSFET N Channel 60V 340mA 2.5V @ 1mA 2.5O @ 500mA,10V SOT-323 RoHS
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Changjing Electronics Technology 5587
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AUD 0.0242
Multiples of: 20

                   
CJ3415


20V 4A 0.037Ω@4.5V,4A 1.3W 0.56V@250uA 160pF@10V P Channel 1450pF@10V 17.2nC@4.5V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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Changjing Electronics Technology 5587
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AUD 0.0523
Multiples of: 10

                   
NX7002AK.215


Transistor: N-MOSFET; unipolar; 60V; 0.12A; 325mW; SOT23
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Nexperia 5582
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AUD 0.0511
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IPB80N08S2L-07


Infineon Technologies MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS
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Infineon 5581
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AUD 3.8746
Multiples of: 1

80 A75 V4.8 mOhmsn - channel 1.2 V- 55 C+ 175 C300 Wsmd/smtTO - 263 - 3-si1 channel20 V233 nCenhancementaec - q101optimos
SP2302BT2


SOT-23 MOSFETs ROHS
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Siliup 5577
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AUD 0.0126
Multiples of: 50

                   
AP3010


MOSFET N Trench 30V 10A 3V @ 250uA 12 mΩ @ 10A,10V SOP-8 RoHS
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Quan Li 5577
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AUD 0.1547
Multiples of: 5

                   
CPC3708CTR


MOSFET N-Channel Depletion Mode FET
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IXYS 5577
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AUD 0.5308
Multiples of: 1

5 mA350 V8 OhmsN - Channel  - 40 C+ 110 C1.1 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel20 V Depletion Clare
CSD87334Q3DT


MOSFET Sync Buck NexFET Power Block
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Texas Instruments 5577
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AUD 1.3996
Multiples of: 250

20 A , 20 A30 v , 30 V8.3 mOhms , 8.3 mOhmsN - Channel 750 mV , 750 mV- 55 C+ 150 C6 WSmd/SmtSON - 8ReelSi2 Channel8 v , 8 V750 mv 6.4 nC , 6.4 nCEnhancement Nexfet
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