MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC070N10LS5ATMA1


100V 7mO@40A,10V N Channel TDSON-8-7 MOSFETs ROHS
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Infineon 8366
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AUD 1.0803
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           Cut Tape       
IQE065N10NM5CGATMA1


MOSFET TRENCH >=100V
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Infineon 4943
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AUD 1.6418
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85 A100 V6.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C100 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
HKTG50N03


30V 50A N Channel PDFN5x6 MOSFETs ROHS
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Hottech 4942
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AUD 0.1263
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IPT004N03LATMA1


N-Channel 30 V 300A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-HSOF-8-1
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Infineon 4942
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AUD 3.3328
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            Optimos      
RQ3E100BNTB1


MOSFETs HSMT8 N-CH 30V 21A
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ROHM 4939
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AUD 0.6914
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21 A30 V10.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C15 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V22 nCEnhancement  
IPD100N04S4-02


MOSFET N-Ch 40V 100A DPAK-2 OptiMOS-T2
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Infineon 4935
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AUD 1.233
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100 A40 V1.7 mOhmsN - Channel 3 V- 55 C+ 175 C150 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel20 V91 nCEnhancementAec - Q101Optimos
AOSS21115C


Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
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Alpha & Omega 4932
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AUD 0.1203
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IRFBG20PBF-BE3


N-Channel 1000V 1.4A (Tc) 54W (Tc) Through Hole TO-220AB
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Vishay 4916
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AUD 1.1792
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1.4 A1 kV11 OhmsN - Channel 4 V- 55 C+ 150 C54 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V38 nCEnhancement  
R8002KND3TL1


MOSFET High-speed Switching Nch 800V 1.6A Power MOSFET
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ROHM 4832
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AUD 0.9966
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1.6 A800 V4.2 OhmsN - Channel 4.5 V- 55 C+ 150 C30 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.5 nCEnhancement  
NCEP3065QU


30V 65A 55W 1.9mΩ@10V,20A N Channel DFN-8(3.3x3.3) MOSFETs ROHS
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NCE Power 4354
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AUD 0.4866
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