MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR514DP-T1-RE3


MOSFETs SOT669 100V 84.8A N-CH MOSFET
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Vishay 5475
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AUD 1.4492
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            Si      
IPTG007N06NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 5474
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AUD 6.1311
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454 A60 V750 uOhmsN - Channel 3.3 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V209 nCEnhancement  
DMN6140LQ-13


MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A
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Diodes Incorporated 5465
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AUD 0.2067
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ST2304


30V 3.2A 50mΩ@10V,3.2A 1.25W N Channel SOT-23-3L MOSFETs ROHS
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STANSON Tech 5462
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AUD 0.0457
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DMN5L06K-7


50V 300mA 2O@5V,50mA 350mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 5461
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AUD 0.0636
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   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
RUF020N02TL


ROHM Semiconductor MOSFET Trans MOSFET N-CH 20V 2A
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ROHM 5461
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AUD 0.1956
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2 A20 V105 mOhmsN - Channel     Smd/SmtTUMT - 3ReelSi1 Channel     
NTE4151PT1G


MOSFET -20V -760mA P-Channel
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ON Semiconductor 5451
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AUD 0.1356
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760 mA20 V490 mOhmsP - Channel  - 55 C+ 150 C313 mWSmd/SmtSC - 89 - 3Cut TapeSi1 Channel6 V Enhancement  
IRF7490TRPBF


N-Channel 100 V 5.4A (Ta) 2.5W (Ta) Surface Mount 8-SO
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Infineon 5372
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AUD 0.5378
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5.4 A100 V39 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V37 nC   
FDG6301N


MOSFET SC70-6 N-CH 25V
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ON Semiconductor 4951
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AUD 0.1393
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220 mA25 V4 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 6Cut TapeSi2 Channel8 V Enhancement  
IRF1404PBF


Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; TO220AB
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Infineon 4943
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AUD 0.8053
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            Hexfet®      
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