MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF5305STRLPBF


MOSFET P Trench 55V 31A 4V @ 250uA 60 mΩ @ 16A,10V TO-263-2 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 5829
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between Fri. 21 Nov to Thu. 27 Nov
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AUD 1.1032

Multiples of: 1

   P Channel      D2PAKReel       
STT6N3LLH6


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 5429
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.1333

Multiples of: 5

                   
SIDR578EP-T1-RE3


MOSFETs SOT669 150V 78A N-CH MOSFET
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Vishay 5427
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 2.3354

Multiples of: 1

78 A150 V8.8 mOhmsN - Channel 4 V- 55 C+ 175 C150 WSMD/SMTPOWERPAK SO - 8 Si1 Channel- 20 V , + 20 V32.5 nCEnhancement  
NTHS4166NT1G


ON Semiconductor MOSFET CHPFT SNGL 30V 8.2A NFET
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ON Semiconductor 5425
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between Fri. 21 Nov to Thu. 27 Nov
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AUD 0.7063

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6.6 A30 V22 mOhmsn - channel  - 55 C+ 150 C1.5 Wsmd/smtCHIP - FET - 8Reelsi1 channel20 V18 nCenhancement  
UT6JE5TCR


MOSFETs -100V 1.0A, Dual Pch+Pch, DFN2020-8D, Power MOSFET
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ROHM 5424
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.3305

Multiples of: 1

1 A100 V840 mOhmsP - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTDFN - 2020 - 8DReel , Cut TapeSi2 Channel- 20 V , + 20 V6.7 nCEnhancement  
HX2300A


MOSFET N Trench 20V 2.5A 1.2V @ 250uA 52 mΩ @ 3.6A,4.5V SOT-23 RoHS
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hengjiaxing 5423
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0125

Multiples of: 50

                   
RS1E220ATTB1


MOSFET PCH -30V -76A POWER
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ROHM 5423
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 1.9206

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76 A30 V4.1 mOhmsP - Channel 1 V- 55 C+ 150 C34 WSmd/SmtHSOP - 8Cut TapeSi1 Channel20 V130 nCEnhancement  
NTZD3155CT1G


MOSFET 20V 540mA/-430mA Complementary w/ESD
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ON Semiconductor 4423
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.1384

Multiples of: 5

540 mA20 V550 mOhms , 900 mOhmsN - Channel, P - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel6 V Enhancement  
DMG1023UV-7


MOSFET MOSFET P-CHANNEL
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Diodes Incorporated 1358
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.1104

Multiples of: 5

1.03 A20 V500 mOhmsP - Channel  - 55 C+ 150 C530 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel6 V622.4 pC   
IRFS52N15DTRLP


Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
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Infineon 776
Ships to you
between Fri. 21 Nov to Thu. 27 Nov
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AUD 2.1375

Multiples of: 1

60 A150 V32 mOhmsN - Channel  - 55 C+ 175 C3.8 WSmd/SmtD2PAKReelSi1 Channel30 V60 nCEnhancement  
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