MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SED10070GG


MOSFET N Trench 100V 70A 4V @ 250uA 9.8 mΩ @ 39A,10V DFN5*6 RoHS
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SINO-IC 5329
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AUD 0.4695
Multiples of: 1

                   
DMN10H100SK3-13


Diodes Incorporated MOSFET 100V N-Ch Enh FET 100mOhm 3V
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Diodes Incorporated 4850
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AUD 0.453
Multiples of: 2500

18 A100 V100 mOhmsN - Channel 1 V- 55 C+ 150 C37 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V25.2 nCEnhancement  
RFD3055LESM9A


Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
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ON Semiconductor 4850
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AUD 0.4539
Multiples of: 50

   N Channel               
SI4447ADY-T1-GE3


40V 7.2A 45mO@5A,10V 4.2W P Channel SO-8 MOSFETs ROHS
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Vishay 4850
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AUD 0.4521
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7.2 A- 40 V45 mOhmsP - Channel20 V- 1.2 v to - 2.5 V- 55 C+ 150 C4.2 WSmd/SmtSO - 8Reel   11.8 nCEnhancement Trenchfet
IPD78CN10NGATMA1


Transistor: N-MOSFET; unipolar; 100V; 13A; 31W; PG-TO252-3
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Infineon 4850
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AUD 0.4707
Multiples of: 2500

            Optimos 2      
BSC052N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 17A; 28W; PG-TDSON-8
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Infineon 4850
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AUD 0.4853
Multiples of: 5000

            Optimos      
SIRA26DP-T1-RE3


MOSFET 25V Vds 16V Vgs PowerPAK SO-8
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Vishay 4850
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AUD 0.4427
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30.3 A25 V2.15 mOhmsN - Channel 2.5 V- 55 C+ 150 C43.1 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel10 V29 nCEnhancement Trenchfet, Powerpak
AON5820


MOSFET 2 N Channel（Double）Common Drain 20V 10A 1V @ 250uA 9.5 mΩ @ 10A,4.5V DFN 2x5 RoHS
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Alpha & Omega 4850
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AUD 0.5015
Multiples of: 1

                   
TSM4946DCS RLG


MOSFET 60V 4.5A Dual N-Chan nel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 0.4989
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4.5 A60 V45 mOhmsN - Channel 1 V- 55 C+ 150 C2.4 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V19 nCEnhancement  
BSZ100N03MS G


MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
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Infineon 4850
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AUD 0.5002
Multiples of: 1

40 A30 V7.3 mOhmsN - Channel 1 V- 55 C+ 150 C30 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V23 nCEnhancement Optimos
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