MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMT6009LSS-13


MOSFET 60V N-Ch Enh FET 20Vgss 12mOhm 4.5Vgs
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Diodes Incorporated 4850
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AUD 0.7846
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   N - Channel     Smd/SmtSO - 8ReelSi1 Channel     
TQM070NH04CR RLG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 0.8049
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54 A40 V7 mOhmsN - Channel 3.6 V- 55 C+ 175 C55.6 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancementAEC - Q101PerFET
FQD8P10TM_F085


Fairchild Semiconductor MOSFET 100V P-Channel QFET
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ON Semiconductor 4850
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AUD 0.8056
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- 6.6 A- 100 V530 mOhmsP - Channel  - 55 C+ 150 C2.5 WThrough HoleDPAK - 3ReelSi1 Channel    Qfet
IPLK60R600PFD7ATMA1


MOSFET LOW POWER_NEW
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Infineon 4850
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AUD 0.8061
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           Cut Tape       
BSZ42DN25NS3GATMA1


Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
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Infineon 4850
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AUD 1.0004
Multiples of: 5000

            Optimos 3      
BSZ520N15NS3GATMA1


Infineon Technologies MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
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Infineon 4850
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AUD 0.8489
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21 A150 V52 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSmd/SmtTSDSON - 8ReelSi1 Channel10 V8.7 nCEnhancement Optimos
MCAC1D4N04YL-TP


MOSFETs N-CHANNEL MOSFET,DFN5060
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Micro Commercial Components (MCC) 4828
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AUD 0.7864
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185 A40 V2.2 mOhmsN - Channel 1.8 V- 55 C+ 150 C83 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V89 nCEnhancement  
YJG80G06B


PDFN-8(5x5.8) MOSFETs ROHS
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Yangjie 4593
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AUD 0.9756
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CRTS095N12N


120V 112A 7mO@10V,75A 254W N Channel TO-263-3 MOSFETs ROHS
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CRMICRO 4016
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AUD 0.9734
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BSC0921NDIATMA1


MOSFET N-Ch 30V,30V 40A,40A TISON-8
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Infineon 2087
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AUD 0.8866
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40 A , 40 A30 v , 30 V5 mOhms , 1.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtTISON - 8ReelSi2 Channel20 V8.9 nC , 33 nCEnhancement Optimos
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