MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIRA54DP-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8
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Vishay 5269
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AUD 0.9828
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         Smd/SmtPOWERPAK - SO - 8Cut TapeSi     Trenchfet, Powerpak
SI8466EDB-T2-E1


Vishay Semiconductors MOSFET 8V 5.4A 1.8W 43mOhms 4.5V
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Vishay 5266
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AUD 0.241
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5.4 A8 V43 mOhmsN - Channel 700 mV  1.8 WSmd/SmtMICRO - FOOT - 4ReelSi 700 mV13 nC  Microfoot Trenchfet
NTD4858N-35G


N-Channel 25 V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Through Hole I-Pak
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ON Semiconductor 5262
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AUD 0.6706
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73 A25 V6.2 mOhmsn - channel 1.45 V- 55 C+ 175 C54.5 Wthrough holeIPAKTubesi1 channel10 V25.7 nCenhancement  
TSM180N03CS RLG


MOSFET 30V, 9A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 5260
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AUD 0.2254
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9 A30 V16 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V4.1 nCEnhancement  
STP14NK60ZFP


Transistor: N-MOSFET; unipolar; 600V; 8.5A; 40W; TO220FP
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STMicroelectronics 5257
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AUD 3.1146
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   N Channel               
AO4614


SOP-8 MOSFETs ROHS
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Youtai 5256
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AUD 0.119
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IPN80R2K4P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223
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Infineon 5252
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AUD 0.4156
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            Coolmos P7      
IRFU4615PBF


Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; IPAK
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Infineon 5247
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AUD 1.4665
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33 A150 V34 mOhmsN - Channel    144 WThrough HoleIPAKTubeSi 20 V26 nC   
IPN80R1K4P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223
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Infineon 5246
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AUD 0.529
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            Coolmos P7      
IRF1104PBF


MOSFET N Trench 40V 100A (Tc) 4V @ 250uA 9 mΩ @ 60A,10V TO-220AB RoHS
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Infineon 5246
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AUD 1.4771
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100 A40 V9 mOhmsN - Channel20 V - 55 C+ 175 C170 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V62 nCEnhancement  
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