MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4431CDY-T1-GE3


P-Channel 30 V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SOIC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 18929
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AUD 0.4386
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel       
SI4403CDY-T1-GE3


MOSFET 1.8V P-Channel
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Vishay 9700
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AUD 0.709
Multiples of: 2500

13.4 A20 V0.0155 OhmsP - Channel8 V- 1 V- 55 C+ 150 C5 WSmd/SmtSO - 8ReelSi1 Channel- 4.5 V90 nCEnhancement Trenchfet
BSC110N06NS3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
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Infineon 4850
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AUD 0.559
Multiples of: 5000

            Optimos 3      
BSZ035N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
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Infineon 4850
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AUD 0.653
Multiples of: 5000

            optimos 3      
BSC0921NDIATMA1


MOSFET N-Ch 30V,30V 40A,40A TISON-8
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Infineon 4850
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AUD 0.6582
Multiples of: 5000

40 A , 40 A30 v , 30 V5 mOhms , 1.6 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtTISON - 8ReelSi2 Channel20 V8.9 nC , 33 nCEnhancement Optimos
STD5N52K3


Transistor: N-MOSFET; unipolar; 525V; 2.77A; 70W; DPAK
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STMicroelectronics 4850
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AUD 0.6944
Multiples of: 2500

            Supermesh      
STD26P3LLH6


Transistor: P-MOSFET; unipolar; -30V; -8.5A; 40W; DPAK
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STMicroelectronics 4850
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AUD 0.7022
Multiples of: 2500

                   
BSZ018NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
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Infineon 4850
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AUD 0.736
Multiples of: 5000

            Optimos      
RD3H045SPTL1


MOSFET Pch -45V -4.5A TO-252 (DPAK)
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ROHM 4700
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AUD 0.7322
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4.5 A45 V155 mOhmsP - Channel 3 V- 55 C+ 150 C15 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V12 nCEnhancement  
STS10DN3LH5


Mosfet Array 2 N-Channel (Dual) 30V 10A 2.5W Surface Mount 8-SOIC
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STMicroelectronics 76
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AUD 1.2208
Multiples of: 1

10 A30 V21 mOhmsn - channel    2.5 Wsmd/smtSO - 8Reelsi2 channel    stripfet
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