MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
APM2305AC


SOT-23 MOSFETs ROHS
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TECH PUBLIC 5214
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AUD 0.0696
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SSM6K404TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=3.0A RDSON=0.055Ohm @ 4V in UF6 package
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Toshiba 5212
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AUD 0.1867
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3 A20 V55 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel10 V5.9 nCEnhancement U - Mosiii
FDS6690AS


MOSFET 30V NCH POWER TRENCH SYNCFET
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ON Semiconductor 5209
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AUD 0.729
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10 A30 V10 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtSO - 8Cut Tapesi1 channel20 V enhancement powertrench syncfet
LBSS139LT1G


50V 0.2A 225mW 3.5O@5V,200mA N Channel SOT-23 MOSFETs ROHS
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Leshan 5205
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AUD 0.0212
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SIRA12DDP-T1-GE3


MOSFETs 30V Vds +20, -16V Vgs PowerPAK SO-8
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Vishay 5200
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AUD 0.3061
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81 A30 V3.6 mOhmsN - Channel 2.4 V- 55 C+ 150 C38 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V22 nCEnhancement  
SI2302DS-T1-GE3-ES


20V 3.5A 350mW 36m@10V,3.5A 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 5199
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AUD 0.0154
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IPB038N12N3 G


MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
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Infineon 5195
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AUD 3.4397
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120 A120 V3.2 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V211 nCEnhancement Optimos
BSC070N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
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Infineon 4710
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AUD 1.0057
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            Optimos 3      
EM6K34T2CR


ROHM Semiconductor MOSFET
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ROHM 3293
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AUD 0.0971
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200 mA50 V2.2 OhmsN - Channel 300 mV + 150 C150 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel4.5 V Enhancement  
RU1C001UNTCL


ROHM Semiconductor MOSFET
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ROHM 2289
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AUD 0.0255
Multiples of: 20

100 mA20 V2.5 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 323FL - 3ReelSi1 Channel8 V Enhancement  
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