MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MCU2D5N04YHQ-TP


MOSFETs N-CHANNEL MOSFET,DPAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) 4850
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AUD 1.0655
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130 A40 V2.5 mOhmsN - Channel 4 V- 55 C+ 175 C125 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi - 20 V , + 20 V57 nCEnhancement  
R6009RND3TL1


MOSFETs TO252 650V 27A N-CH MOSFET
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ROHM 4850
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AUD 1.1518
Multiples of: 2500

9 A600 V665 mOhmsN - Channel 7 V- 55 C+ 150 C125 WSMD/SMTDPAK - 3 (TO - 252 - 3)ReelSi1 Channel- 30 V , + 30 V22 nCEnhancement  
SI4455DY-T1-E3


Vishay Semiconductors MOSFET 150V 8.9A 5.9W 295mohm 10V
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Vishay 4850
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AUD 1.166
Multiples of: 2500

2 A- 150 V295 mOhmsp - channel20 V - 50 C+ 150 C3.1 Wsmd/smtSOIC - 8 NarrowReelsi   enhancement trenchfet
BSC060N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
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Infineon 4850
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AUD 1.166
Multiples of: 5000

            Optimos 3      
R6007RND3TL1


MOSFETs POWER MOSFET SUITABLE F/SWITCH
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ROHM 4850
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AUD 1.2
Multiples of: 2500

7 A600 V940 mOhmsN - Channel 7 V- 55 C+ 150 C96 WSMD/SMTDPAK - 3 (TO - 252 - 3)ReelSi1 Channel- 30 V , + 30 V17.5 nCEnhancement  
STD85N10F7AG


MOSFET Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in a DPAK package
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STMicroelectronics 4850
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AUD 1.2196
Multiples of: 2500

70 A100 V10 mOhmsN - Channel 2.5 V- 55 C+ 175 C85 WSmd/SmtDPAK - 3 Si1 Channel+/- 20 V45 nCEnhancement  
R6007KND3TL1


MOSFETs MOSFET 600V NCH 7A TO-252
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ROHM 4850
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AUD 1.2314
Multiples of: 1

7 A600 V620 mOhmsN - Channel 5 V- 55 C+ 150 C78 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.5 nCEnhancement  
STD9NM40N


STMicroelectronics MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
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STMicroelectronics 4850
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AUD 1.2317
Multiples of: 2500

5.6 A400 V790 mOhmsN - Channel 3 V + 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel25 V14 nC  Mdmesh
IRFB7440GPBF


Infineon IR MOSFET MOSFET, 40V, 120A, 2 90 nC Qg, TO-220AB
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Infineon 4850
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AUD 1.2451
Multiples of: 1

120 A40 V2.5 mOhmsN - Channel    208 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V135 nCEnhancement Strongirfet
BSC014N04LSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 4850
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AUD 1.2483
Multiples of: 5000

100 A40 V1.4 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V61 nCEnhancement  
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