MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC060N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
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Infineon 10426
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AUD 1.3807
Multiples of: 1

            Optimos 3      
BSZ096N10LS5ATMA1


MOSFET TRENCH >=100V
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Infineon 4850
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AUD 1.1127
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40 A100 V9.6 mOhmsN - Channel 1.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8Cut TapeSi1 Channel10 V22 nCEnhancement Optimos
BSZ028N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
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Infineon 4850
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AUD 1.1754
Multiples of: 5000

            Optimos 3      
STD85N10F7AG


MOSFET Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET F7 Power MOSFET in a DPAK package
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STMicroelectronics 4850
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AUD 1.1542
Multiples of: 2500

70 A100 V10 mOhmsN - Channel 2.5 V- 55 C+ 175 C85 WSmd/SmtDPAK - 3 Si1 Channel+/- 20 V45 nCEnhancement  
HP8KB6TB1


MOSFETs 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4850
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AUD 1.1706
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24 A40 V15.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C21 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V22 nCEnhancement  
SI4464DY-T1-E3


N-Channel 200 V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
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Vishay 4850
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AUD 1.2088
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
STD9NM60N


MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO
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STMicroelectronics 4850
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AUD 1.2554
Multiples of: 2500

6.5 A600 V745 mOhmsn - channel    70 Wsmd/smtDPAKReelsi1 channel    mdmesh
STD9NM40N


STMicroelectronics MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II
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STMicroelectronics 1142
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AUD 1.135
Multiples of: 1

5.6 A400 V790 mOhmsN - Channel 3 V + 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel25 V14 nC  Mdmesh
IPD60R180P7ATMA1


MOSFET HIGH POWER_NEW
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Infineon 965
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AUD 1.4701
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18 A600 V145 mOhmsN - Channel 3 V- 55 C+ 150 C72 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V25 nCEnhancement Coolmos
STD14NM50NAG


MOSFET Automotive-grade N-channel 500 V 0.28 Ohm typ. 12 A MDmesh II Power MOSFET in a DPAK package
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STMicroelectronics 901
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AUD 1.297
Multiples of: 1

12 A500 V280 mOhmsN - Channel 2 V + 150 C90 WSmd/SmtTO - 252 - 3 Si1 Channel25 V27 nC Aec - Q101Mdmesh
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