MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM110NB04DCR RLG


MOSFET Dual N-Chan Pwr MOSFET 40V 48A 11mu
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Taiwan Semiconductor 4850
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AUD 1.9701
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NVMFS5C404NLWFHT3G


MOSFETs T6 40V HEFET
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ON Semiconductor 4850
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AUD 2.0429
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370 A40 V670 uOhmsN - Channel 2 V- 55 C+ 175 C200 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel20 V181 nCEnhancement  
R6007ENXC7G


MOSFET 600V POWER MOSFET
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ROHM 4850
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AUD 2.3846
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7 A600 V620 mOhmsN - Channel 4 V- 55 C+ 155 C46 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V20 nCEnhancement  
BSC010N04LSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 4850
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AUD 2.472
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100 A40 V1 OhmsN - Channel 1.2 V- 55 C+ 150 C139 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V133 nCEnhancement  
PSMN4R3-30PL,127


MOSFET N-CH 30V 4.3 mOhm Logic Level MOSFET
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Nexperia 4850
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AUD 2.6629
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100 A30 V4.3 mOhmsN - Channel    103 WThrough HoleTO - 220 - 3TubeSi1 Channel     
STB12NK80ZT4


STMicroelectronics MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH
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STMicroelectronics 4850
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AUD 5.7864
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10.5 A800 V750 mOhmsN - Channel30 V - 55 C+ 150 C190 WSmd/SmtD2PAK - 3ReelSi1 Channel30 V87 nCEnhancement Supermesh
PSMN4R6-60PS,127


MOSFET N-CH 60V STD LEVEL MOSFET
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Nexperia 4850
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AUD 4.3134
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100 A60 V8.4 mOhmsN - Channel 4.8 V- 55 C+ 175 C211 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V70.8 nCEnhancement  
BSC004NE2LS5


TDSON-8 MOSFETs ROHS
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Infineon 3879
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AUD 2.9523
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BSZ123N08NS3 G


Infineon Technologies MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
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Infineon 3395
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AUD 2.1991
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10 A80 V12.3 mOhmsN - Channel20 V2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V25 nCEnhancement Optimos
STD18N65M5


Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK
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STMicroelectronics 2425
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AUD 1.9977
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15 A650 V198 mOhmsN - Channel 3 V- 55 C+ 150 C110 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 25 V , 25 V31 nCEnhancement MDmesh
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