MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3007SPS-13


MOSFET P Trench 30V 90A (Tc) 3V @ 250uA 7 mΩ @ 15A,10V PowerDI5060-8 RoHS
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Diodes Incorporated 5228
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AUD 0.6041
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IRLML2502TRPBF-HXY


SOT-23 MOSFETs ROHS
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HXY MOS 5189
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AUD 0.0442
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ZXMS6005DT8TA


Diodes Incorporated MOSFET 60V N-Ch Intellifet 200mohm 1.8A 210mJ
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Diodes Incorporated 5189
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AUD 1.6392
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1.8 A60 V200 mOhmsN - Channel 700 mV- 40 C+ 125 C2.13 WSmd/SmtSM - 8ReelSi2 Channel5 V Enhancement Intellifet
RH6G040BGTB1


MOSFETs N CHAN 40V HSMT8
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ROHM 5188
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AUD 1.4405
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95 A40 V3.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C59 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25 nCEnhancement  
YFW3404B


30V 5.8A 29mΩ@10V,4A 1W 1.2V@250uA null SOT-23 MOSFETs ROHS
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YFW Electronics 5179
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AUD 0.0326
Multiples of: 20

                   
Si4401FDY-T1-GE3


MOSFET -40V Vds 20V Vgs SO-8
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Vishay 5178
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AUD 0.4114
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14 A40 V14.2 mOhmsP - Channel 1 V- 55 C+ 150 C3.2 WSmd/SmtSO - 8Cut TapeSi1 Channel- 10 V66 nCEnhancement  
WSG02P06


60V 2A 175mΩ@10V,2A 2W P Channel SOT-223-4 MOSFETs ROHS
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Winsok 5178
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AUD 0.2222
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DMT8008LFG-7


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 5178
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AUD 1.0162
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           Cut Tape       
FDC640P


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 5174
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AUD 0.1628
Multiples of: 5

                   
PJA3435_R1_00001


MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
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Panjit 4706
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AUD 0.0821
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500 mA20 V6 OhmsP - Channel 1 V- 55 C+ 150 C500 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V1.4 nCEnhancement  
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