MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC010N04LS6ATMA1


MOSFET TRENCH <= 40V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4850
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AUD 1.4233
Multiples of: 5000

100 A40 V1 mOhmsN - Channel 1.3 V- 55 C+ 175 C150 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V67 nCEnhancement  
TQM025NH04LCR RLG


MOSFETs 40V, 100A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 1.5728
Multiples of: 1

100 A40 V2.5 mOhmsN - Channel 1.9 V- 55 C+ 175 C136 WSMD/SMTPDFN56UReel , Cut TapeSi1 Channel- 16 V , + 16 V63.3 nCEnhancementAEC - Q101PerFET
TQM070NB04CR RLG


MOSFET 40V, 75A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 1.4713
Multiples of: 1

15 A40 V7 mOhmsN - Channel 3.8 V- 55 C+ 175 C3.1 WSMD/SMTPDFN56U - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V42 nCEnhancementAEC - Q101 
BSC019N04NSGATMA1


40V 1.9mO@50A,10V N Channel TDSON-8-1 MOSFETs ROHS
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Infineon 4850
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AUD 1.5858
Multiples of: 5000

           Reel      Optimos
STB30NF20L


STMicroelectronics MOSFET N-Ch 200V 0.065 Ohm 30A STripFET 150W
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STMicroelectronics 4850
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AUD 1.5793
Multiples of: 1000

30 A200 V65 mOhmsN - Channel    150 WSmd/SmtTO - 252 - 3ReelSi1 Channel   Aec - Q101Stripfet
STB11N65M5


MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
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STMicroelectronics 4850
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AUD 1.2315
Multiples of: 1000

9 A650 V480 mOhmsN - Channel    85 WSmd/SmtD2PAKReelSi1 Channel    Mdmesh
BSC011N03LSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 4850
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AUD 1.797
Multiples of: 1

100 A30 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V72 nCEnhancement  
STB13NM60N


Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
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STMicroelectronics 4850
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AUD 1.7504
Multiples of: 1000

            mdmesh      
SPP80N03S2L04AKSA1


Infineon Technologies MOSFET N-Ch 30V 80A TO220-3
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Infineon 4850
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AUD 2.0532
Multiples of: 1

80 A30 V3.6 mOhmsn - channel 1.2 V- 55 C+ 175 C188 Wthrough holeTO - 220 - 3Tubesi1 channel20 V105 nCenhancement  
IPB90N06S4L04ATMA2


MOSFET N-Ch 60V 90A D2PAK-2
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Infineon 474
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AUD 1.6746
Multiples of: 1

90 A60 V3.4 mOhmsN - Channel     Smd/SmtTO - 263 - 3ReelSi1 Channel   Aec - Q101 
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