MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
P70LF4QNK-5071


Transistor: N-MOSFET; EETMOS4; unipolar; 40V; 70A; Idm: 210A; 123W
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Shindengen 4850
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AUD 1.26
Multiples of: 1

            EETMOS4      
TPH1400CQ5,LQ


MOSFETs 150V UMOS10-H SOP Advance(N) 14.1mohm
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Toshiba 4850
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AUD 1.2827
Multiples of: 1

77 A150 V14.1 mOhmsN - Channel 4.5 V + 175 C170 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31 nCEnhancement  
IPD60R180P7ATMA1


MOSFET HIGH POWER_NEW
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Infineon 4850
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AUD 1.283
Multiples of: 2500

18 A600 V145 mOhmsN - Channel 3 V- 55 C+ 150 C72 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V25 nCEnhancement Coolmos
TQM043NH04LCR RLG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 1.2997
Multiples of: 1

54 A40 V4.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C100 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V20 nCEnhancement PerFET
STF4N90K5


MOSFET N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package
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STMicroelectronics 4850
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AUD 1.3095
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4 A900 V1.9 OhmsN - Channel 3 V- 55 C+ 150 C20 WThrough HoleTO - 220FP - 3 Si1 Channel30 V5.3 nCEnhancement Mdmesh
TQM032NH04CR RLG


MOSFETs 40V, 81A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 1.3255
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81 A40 V3.8 mOhmsN - Channel 3.6 V- 55 C+ 175 C115 WSMD/SMTPDFN - 56Reel , Cut TapeSi1 Channel- 20 V , + 20 V45 nCEnhancement  
TQM032NH04LCR RLG


MOSFETs 40V, 81A, Single N-Channel Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 4850
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AUD 1.3255
Multiples of: 1

81 A40 V3.2 mOhmsN - Channel 2.2 V- 55 C+ 175 C115 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V23.7 nCEnhancement PerFET
FDD18N20LZ


Fairchild Semiconductor MOSFET 200V NChannel UniFET
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ON Semiconductor 4850
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AUD 1.3657
Multiples of: 250

16 A200 V125 mOhmsN - Channel  - 55 C+ 150 C89 WThrough HoleDPAK - 3ReelSi1 Channel    Unifet
STD14NM50NAG


MOSFET Automotive-grade N-channel 500 V 0.28 Ohm typ. 12 A MDmesh II Power MOSFET in a DPAK package
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STMicroelectronics 4850
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AUD 1.3789
Multiples of: 1

12 A500 V280 mOhmsN - Channel 2 V + 150 C90 WSmd/SmtTO - 252 - 3 Si1 Channel25 V27 nC Aec - Q101Mdmesh
TQM070NB04CR RLG


MOSFET 40V, 75A, Single N-Channel Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 4850
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AUD 1.4713
Multiples of: 1

15 A40 V7 mOhmsN - Channel 3.8 V- 55 C+ 175 C3.1 WSMD/SMTPDFN56U - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V42 nCEnhancementAEC - Q101 
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