MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD034N06N3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
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Infineon 4850
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AUD 1.0541
Multiples of: 2500

            Optimos 3      
TPH4R008NH1,LQ


MOSFETs 2-5Q1S 80V N-CH MOSFET
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Toshiba 4850
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AUD 0.9996
Multiples of: 1

116 A80 V4 mOhmsN - Channel 4 V + 150 C170 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V59 nCEnhancement  
BSC0911NDATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4850
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AUD 1.0179
Multiples of: 5000

            Optimos      
HP8KB6TB1


MOSFETs 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4850
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AUD 1.169
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24 A40 V15.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C21 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V22 nCEnhancement  
DMTH10H010SPS-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 4850
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AUD 1.0519
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123 A100 V8.8 mOhmsN - Channel 2 V- 55 C+ 175 C166 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V56.4 nCEnhancement  
NVD5C486NLT4G


MOSFET T6 40V DPAK EXP
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ON Semiconductor 4850
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AUD 1.0294
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24 A40 V16 mOhmsN - Channel 1.2 V- 55 C+ 175 C18 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V9.8 nCEnhancementAec - Q101 
BSZ017NE2LS5IATMA1


MOSFET TRENCH <= 40V
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Infineon 4850
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AUD 1.1075
Multiples of: 1

 25 V N - Channel     Smd/SmtTSDSON - 8Cut TapeSi     Optimos
BSZ018NE2LSIATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
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Infineon 4850
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AUD 1.1007
Multiples of: 5000

            Optimos      
YJG88G12A


PDFN5060-8L MOSFETs ROHS
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Yangjie 3433
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AUD 1.1961
Multiples of: 1

                   
SI4100DY-T1-GE3


MOSFET 100V 6.8A 6.0W 63mohm @ 10V
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Vishay 200
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AUD 1.2915
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
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