MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPH4R008NH,L1Q


N-Channel 80 V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 4850
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AUD 1.0183
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100 A80 V3.3 mOhmsn - channel 2 v to 4 V- 55 C+ 150 C78 Wsmd/smtSOP - 8Reelsi1 channel20 V59 nC  umosviii
STD2N62K3


Transistor: N-MOSFET; unipolar; 620V; 1A; 45W; DPAK
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STMicroelectronics 4850
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AUD 1.2961
Multiples of: 2500

2.2 A620 V3.6 OhmsN - Channel 3 V- 55 C+ 150 C45 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V15 nCEnhancement MDmesh
STD45N10F7


MOSFET Nchanl 100V 0013 Ohm typ 45 A Pwr MOSFET
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STMicroelectronics 4850
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AUD 1.0448
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45 A100 V18 mOhmsn - channel20 V4.5 V- 55 C+ 175 C60 Wsmd/smtDPAK - 2Reelsi1 channel20 V25 nC  stripfet
BSZ018NE2LSIATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
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Infineon 4850
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AUD 1.0261
Multiples of: 5000

            Optimos      
DMTH10H010SPS-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 4850
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AUD 1.0519
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123 A100 V8.8 mOhmsN - Channel 2 V- 55 C+ 175 C166 WSMD/SMTPowerdi5060 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V56.4 nCEnhancement  
IPD034N06N3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
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Infineon 4850
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AUD 1.0541
Multiples of: 2500

            Optimos 3      
NVD5C486NLT4G


MOSFET T6 40V DPAK EXP
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ON Semiconductor 4850
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AUD 1.1263
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24 A40 V16 mOhmsN - Channel 1.2 V- 55 C+ 175 C18 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V9.8 nCEnhancementAec - Q101 
R6007KND3TL1


MOSFETs MOSFET 600V NCH 7A TO-252
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ROHM 4850
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AUD 1.1345
Multiples of: 1

7 A600 V620 mOhmsN - Channel 5 V- 55 C+ 150 C78 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.5 nCEnhancement  
BSC011N03LSIATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
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Infineon 4850
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AUD 1.1502
Multiples of: 5000

            Optimos      
STD40NF10


100V 50A 25mO@10V,25A 125W N Channel DAPK MOSFETs ROHS
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STMicroelectronics 1791
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AUD 1.1598
Multiples of: 1

50 A100 V28 mOhmsN - Channel  - 55 C+ 175 C125 WSmd/SmtDPAKReelSi1 Channel20 V Enhancement Stripfet
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