MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM650N15CR RLG


MOSFET 150V, 24A, Single N- Channel Power MOSFET
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Taiwan Semiconductor 4838
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AUD 4.5
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24 A150 V N - Channel 2 V- 55 C+ 150 C96 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V36 nCEnhancement  
RS3E135BNGZETB


MOSFET Nch 30V 13.5A Si MOSFET
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ROHM 4837
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AUD 0.6863
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13.5 A30 V5.7 mOhmsN - Channel 1 V + 150 C2 WSmd/SmtSOP - 8Cut TapeSi1 Channel20 V33 nCEnhancement  
DMN4026SSDQ-13


MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss
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Diodes Incorporated 4837
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AUD 0.7
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PJQ4534P-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 4836
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AUD 0.3866
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38 A30 V9.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C21.4 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.5 nCEnhancementAEC - Q101 
BUK768R1-40E,118


MOSFET N-CHANNEL TRENCH STD LEVEL
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Nexperia 4835
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AUD 1.123
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75 A40 V7.2 mOhmsN - Channel 2.4 V- 55 C+ 175 C96 WSMD/SMTTO - 263 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V24 nCEnhancementAEC - Q101 
BSC080N12LSGATMA1


MOSFET TRENCH >=100V
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Infineon 4834
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AUD 2.3654
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2300A


20V 6A 19mΩ 1.2V N Channel SOT23 MOSFETs ROHS
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HL 4830
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AUD 0.0167
Multiples of: 20

                   
MOT3510J


30V 25A 7.5m@10V,10A 25W 2.5V@250uA 1PCSNChannel PDFN3x3 MOSFETs ROHS
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MOT 4811
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AUD 0.0975
Multiples of: 5

                   
SQS183ENW-T1_GE3


MOSFETs P-CHANNEL 150-V (D-S) 175C MOSFET
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Vishay 4790
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AUD 0.583
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   N - Channel  - 55 C  SMD/SMT  Si1 Channel     
DMG301NU-13


MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W
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Diodes Incorporated 4762
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AUD 0.1408
Multiples of: 5

260 mA25 V4 OhmsN - Channel 700 mV- 55 C+ 150 C320 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V360 pCEnhancement  
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