MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFBC30APBF-BE3


MOSFET 600V N-CH HEXFET
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Vishay 4844
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AUD 1.7124
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3.6 A600 V2.2 OhmsN - Channel 4.5 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V23 nCEnhancement  
DI114N06PQ


MOSFETs
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Diotec 4844
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AUD 2.2358
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R6024ENXC7G


MOSFET 600V POWER MOSFET
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ROHM 4844
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AUD 5.0192
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24 A600 V165 mOhmsN - Channel 4 V- 55 C+ 155 C74 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V70 nCEnhancement  
NCE30H10G


PDFN-8(5.1x5.8) MOSFETs ROHS
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NCE Power 4843
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AUD 0.3465
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ISC026N03L5SATMA1


MOSFET TRENCH <= 40V
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Infineon 4843
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AUD 0.6538
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           Cut Tape       
KNY3303A


30V 90A 4mO@10V,24A 69W N Channel PDFN-8(5.8x4.9) MOSFETs ROHS
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KIA 4841
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AUD 0.2042
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DMP4015SPSQ-13


MOSFET 40V P-Ch Enh FET 25Vgss -100A 1.3W
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Diodes Incorporated 4841
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AUD 0.5057
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- 8.5 A- 40 V15 mOhmsP - Channel - 1.5 V- 55 C+ 150 C1.3 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel25 V47.5 nCEnhancementAec - Q101 
AGM12N10AP


100V 55A 9.3m@10V,20A 83W 1.8V@250uA 1PCSNChannel PDFN3.3x3.3 MOSFETs ROHS
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AGM-Semi 4840
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AUD 0.2879
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TPH8R808QM,LQ


MOSFETs 80V UMOS9-H SOP-Advance(N) 8.8mohm
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Toshiba 4840
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AUD 0.4865
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79 A60 V , 80 V8.8 mOhmsN - Channel 3.5 V + 175 C109 WSMD/SMTSOP - 8ReelSi1 Channel- 20 V , + 20 V26 nCEnhancement  
JSM50N06D


TO-252 MOSFETs ROHS
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JSMSEMI 4122
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AUD 0.1086
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