MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
4559A


SOP-8 MOSFETs ROHS
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HL 5097
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AUD 0.0943
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BSC252N10NSFGXT


MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
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Infineon 5093
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AUD 0.8652
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40 A100 V19.5 mOhmsN - Channel 2 V- 55 C+ 150 C78 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V17 nCEnhancement  
T2N7002AK-MS


60V 300mA 2.2Ω@10V,300mA 350mW N Channel SOT-23 MOSFETs ROHS
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MSKSEMI 5092
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AUD 0.0123
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ASDM20P09ZB-R


20V 9A 16mΩ@4.5V,4A 1.8W 700mV@250uA 90pF@10V P Channel 1.2nF@10V 15nC@4.5V -55℃~+150℃@(Tj) SOT-23-3 MOSFETs ROHS
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Ascend 5092
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AUD 0.0669
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DMP3026SFDE-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 5091
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AUD 0.2952
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8.7 A30 V15 mOhmsP - Channel 3 V- 55 C+ 150 C2 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel25 V19.6 nCEnhancement  
SUM110P04-05-E3


40V 110A 5mO@10V,20A P Channel TO-263-2 MOSFETs ROHS
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Vishay 5088
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AUD 3.4746
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110 A40 V5 mOhmsP - Channel 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel10 V185 nCEnhancement Trenchfet
LGE2305


Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23
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Luguang 5087
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AUD 0.0867
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SED3080M


MOSFET N Trench 30V 80A 3V @ 250uA 6.5 mΩ @ 25A,10V DFN 3x3 RoHS
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SINO-IC 5086
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AUD 0.1545
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RU7080L


TO-252 MOSFETs ROHS
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Ruichips 5085
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AUD 0.2202
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SIR770DP-T1-GE3


MOSFET 30V 8A/8A DUAL N-CH MOSFET w/Shottky
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Vishay 5084
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AUD 0.7772
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
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