MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF510PBF


N-Channel 100 V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 5701
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.5526

Multiples of: 1

5.6 A100 V540 mOhmsN - Channel 2 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V8.3 nCEnhancement  
IRF7341TRPBFXTMA1


MOSFETs Y
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Infineon 5024
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.4924

Multiples of: 1

4.7 A55 V50 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSMD/SMTSO - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V24 nCEnhancement  
MGSF1N02LT1


Trans MOSFET N-CH 20V 0.75A 3-Pin SOT-23 T/R
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ON Semiconductor 5023
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between Fri. 21 Nov to Thu. 27 Nov
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AUD 1.4846

Multiples of: 1

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IXTY02N50D


IXYS MOSFET 0.2 Amps 500V 30 Rds
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IXYS 5020
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 1.6902

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200 mA500 V30 Ohmsn - channel20 V-- 55 C+ 150 C1.1 Wsmd/smtDPAK - 3Tube-1 channel20 V-depletion  
TSM3443CX6 RFG


MOSFET -20V -4.7A Single P- Channel Power MOSFE
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Taiwan Semiconductor 5011
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.241

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15 A20 V48 mOhmsP - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel4.5 V6 nCEnhancement  
SIR873DP-T1-GE3


TrenchFET Gen IV Power MOSFET P-Channel Single -150V VDS ±20V VGS -29A ID 8-Pin PowerPAK SOIC T/R
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Vishay 5009
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between Fri. 21 Nov to Thu. 27 Nov
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AUD 1.4022

Multiples of: 1

37 A150 V39.5 mOhmsP - Channel 4 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V25 nC  Trenchfet, Powerpak
TPH2R608NH,L1Q


MOSFET Power MOSFET N-Channel Single
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Toshiba 5003
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 1.0911

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150 A75 V2.1 mOhmsN - Channel 2 V- 55 C+ 150 C142 WSmd/SmtSOP - 8ReelSi1 Channel20 V72 nCEnhancement  
SSM5H08TU,LF


MOSFET Small Signal MOSFET N-ch+SBD VDSS=20VVR=20V ISBD=0.5A VGSS=+-12V ID=1.5ARDSON=0.140Ohm@4V
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Toshiba 5002
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.1848

Multiples of: 1

1.5 A20 V160 mOhmsN - Channel 1.1 V- 40 C+ 100 C0.5 WSmd/SmtUFV - 5Cut TapeSi1 Channel12 V Enhancement  
BSC0902NS


MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
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Infineon 4973
Ships to you
between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.5203

Multiples of: 1

100 A30 V2.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C48 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V35 nCEnhancement Optimos
Hot IRFB3206PBF


Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
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Infineon 4829
Ships to you
between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.7461

Multiples of: 1

210 A60 V2.4 mOhmsN - Channel    300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
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