MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SN7002NH6433XTMA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 9700
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AUD 0.0528
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200 mA60 V2.5 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V1.5 nCEnhancement  
SWHA120R45VT


45V 38A 10.5mΩ DFN(5x6) MOSFETs ROHS
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Sam&wing 4816
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AUD 0.1813
Multiples of: 5

                   
IPG20N06S2L35ATMA1


MOSFET N-CHANNEL_55/60V
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Infineon 4816
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AUD 0.9875
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   Dual N Channel      TDSON - 8Reel       
R5205PND3FRATL


MOSFETs TO252 525V 5A N-CH
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ROHM 4816
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AUD 1.2461
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5 A525 V1.6 OhmsN - Channel 4.5 V- 55 C+ 150 C65 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 30 V , 30 V10.8 nCEnhancement  
DI150N04PQ


MOSFETs MOSFET, PowerQFN 5x6, 40V, 150A, 150C, N
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Diotec 4816
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AUD 1.6186
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150 A40 V1.45 mOhmsN - Channel 4 V- 55 C+ 150 C125 WSMD/SMTQFN - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V61 nCEnhancement  
IRFR2405TRPBF


MOSFET N Trench 55V 56A 4V @ 250uA 16 mΩ @ 34A,10V TO-252-2 (DPAK) RoHS
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Infineon 4812
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AUD 0.6939
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56 A55 V16 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtDPAKReelSi1 Channel20 V70 nCEnhancement  
TQM150NB04DCR


MOSFET 40V MOSFET 15 MOhms
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Taiwan Semiconductor 4812
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AUD 0.8619
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           Cut Tape       
IRF620SPBF


N-Channel 200 V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 4812
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AUD 1.5829
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   N - Channel  - 55 C+ 150 C Smd/SmtD2PAK - 2TubeSi      
30G20F


30V 1PCSNChannel+1PCSPChannel PDFN-8(5x6) MOSFETs ROHS
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HL 4811
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AUD 0.135
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SIRS4600DP-T1-RE3


MOSFETs N-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 1.2 mohm a. 10V 1.03 mohm a. 7.5V
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Vishay 4593
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AUD 2.97
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334 A60 V1.2 mOhmsN - Channel 4 V- 55 C+ 150 C240 WSMD/SMTSO - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V81 nCEnhancement  
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