MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3418


MOSFET N Trench 30V 3.8A 1.8V @ 250uA 60 mΩ @ 3.8A,10V SOT-23-3L RoHS
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Alpha & Omega 7760
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AUD 0.1014
Multiples of: 5

                   
FQPF7P20


MOSFET 200V P-Channel QFET
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ON Semiconductor 5058
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AUD 1.2868
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5.2 A200 V690 mOhmsP - Channel  - 55 C+ 150 C45 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement Qfet
AS2312


MOSFET N Trench 20V 5A 1.2V @ 250uA 25 mΩ @ 5A,4.5V SOT-23 (SOT-23-3) RoHS
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AnBon 5057
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AUD 0.0478
Multiples of: 10

                   
DMC2004LPK-7


X1-DFN1612-6 MOSFETs ROHS
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Diodes Incorporated 5057
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AUD 0.22
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750 mA , 600 mA20 V550 mOhms , 900 mOhmsN - Channel, P - Channel 500 mV- 65 C+ 150 C500 mWSmd/SmtDFN1612 - 6Cut TapeSi2 Channel4.5 V Enhancement  
SM4512NHKPC-TRG


MOSFET N Trench 30V 80A (Tc) 2.3V @ 250uA 1.9 mΩ @ 20A,10V DFN5x6A-8_EP RoHS
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Sinopower 5054
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AUD 0.3122
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AONR36366-MS


30V 100A 4mΩ@10V 2.5V N Channel DFN3x3-8L MOSFETs ROHS
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MSKSEMI 5048
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AUD 0.1813
Multiples of: 5

                   
BSS84


50V 130mA 200mW 10Ω@5V,100mA 2.5V@250uA P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 5044
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AUD 0.0139
Multiples of: 50

                   
IQE013N04LM6ATMA1


40V 1.35mO@20A,10V N Channel TSON-8-4 MOSFETs ROHS
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Infineon 4839
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AUD 1.4929
Multiples of: 1

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SI4459ADY-T1-GE3


MOSFET -30V Vds 20V Vgs SO-8
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Vishay 4764
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AUD 0.9403
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29 A30 V5 mOhmsP - Channel 1 V- 55 C+ 150 C7.8 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V129 nCEnhancement Trenchfet
IRFR540ZTRLPBF


N-Channel 100 V 35A (Tc) 91W (Tc) Surface Mount D-Pak
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Infineon 4757
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AUD 0.6897
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35 A100 V28.5 mOhmsN - Channel 4 V- 55 C+ 175 C91 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V39 nCEnhancement  
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