MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM650N15CR RLG


MOSFET 150V, 24A, Single N- Channel Power MOSFET
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Taiwan Semiconductor 4838
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AUD 4.5
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24 A150 V N - Channel 2 V- 55 C+ 150 C96 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V36 nCEnhancement  
DMN4026SSDQ-13


MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss
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Diodes Incorporated 4837
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AUD 0.7
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           Cut Tape       
PJQ4534P-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 4836
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AUD 0.3957
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38 A30 V9.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C21.4 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.5 nCEnhancementAEC - Q101 
NVTFS5116PL-MS


60V 20A 85mΩ@10V 2.5V P Channel DFN3x3-8L MOSFETs ROHS
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MSKSEMI 4835
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AUD 0.1956
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PJQ4439EP-AU_R2_002A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 4835
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AUD 0.3538
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9 A30 V19.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C30 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V22 nCEnhancementAEC - Q101 
ISC037N13NM6ATMA1


MOSFETs N
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Infineon 4835
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AUD 4.1723
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172 A135 V3.7 mOhmsN - Channel 3.5 V- 55 C+ 175 C250 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V82 nCEnhancement  
RD3H160SPFRATL


MOSFET Pch -45V Vdss -16A TO-252(DPAK); TO-252
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ROHM 4833
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AUD 0.9966
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16 A45 V50 mOhmsP - Channel - 3 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut Tape 1 Channel20 V16 nCEnhancement  
MCP2D6N10Y-BP


MOSFETs N-CHANNEL MOSFET,TO-220AB(H)
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Micro Commercial Components (MCC) 4812
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AUD 2.9388
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240 A100 V2.3 mOhmsN - Channel 2.8 V- 55 C+ 150 C208 WThrough HoleTO - 220AB - 3BulkSi1 Channel- 20 V , + 20 V257 nCEnhancement  
DMP2035UVTQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 4643
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AUD 0.2003
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6 A20 V35 mOhmsP - Channel 400 mV- 55 C+ 150 C2 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel- 4.5 V15.4 nCEnhancementAec - Q101 
YJQ20N04A


40V 20A 11mΩ@10V,20A 21W N Channel V-DFN3333-8 MOSFETs ROHS
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Yangjie 2905
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AUD 0.1791
Multiples of: 5

                   
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