MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STU2LN60K3


MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3
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STMicroelectronics 5114
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AUD 0.7019
Multiples of: 1

2 A600 V4 Ohmsn - channel 3.75 V- 55 C+ 150 C45 Wthrough holeIPAK - 3Tubesi1 channel30 V12 nCenhancement supermesh
FDMC86320


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor 5114
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AUD 1.3654
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22 A80 V11.7 mOhmsN - Channel   + 150 C40 WSmd/SmtPOWER - 33ReelSi1 Channel 24 nC , 29 nC   
2SJ305TE85LF


Toshiba MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
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Toshiba 5113
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AUD 0.4782
Multiples of: 1

- 200 mA- 30 V2.4 OhmsP - Channel20 V- 1.5 V- 55 C+ 150 C200 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 2.5 V Enhancement  
DMTH4011SPD-13


MOSFET MOSFET BVDSS 31V 40V
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Diodes Incorporated 5112
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AUD 0.4976
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42 A40 V15 mOhmsN - Channel 2 V- 55 C+ 175 C37.5 WSmd/SmtPowerdi5060 - 8Cut TapeSi2 Channel20 V10.6 nCEnhancement  
DMP3045LVT-7


MOSFET MOSFET BVDSS: 25V~30V TSOT26 T&R 3K
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Diodes Incorporated 5111
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AUD 0.199
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5.4 A30 V42 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.2 WSMD/SMT  Si1 Channel- 20 V , + 20 V7 nCEnhancement  
EMH2408-TL-H


ON Semiconductor MOSFET NCHNCH 2.5V DRIVE SERIES
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ON Semiconductor 5111
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AUD 0.3046
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4 A20 V45 mOhmsn - channel     smd/smtEMH8 - 8Reelsi2 channel     
SIJ494DP-T1-GE3


SIJ494DP-T1-GE3**MULT1^9172^3106951
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Vishay 5109
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AUD 1.3346
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36.8 A150 V19.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C69.4 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V31 nCEnhancement Thunderfet, Powerpak
ZXMS6004FF-7


MOSFETs Low Side IntelliFET SOT23F T&R 3K
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Diodes Incorporated 5105
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AUD 0.4994
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1.3 A60 V500 mOhmsN - Channel 1.5 V- 40 C+ 150 C1.5 WSMD/SMTSOT - 23F - 3Reel , Cut TapeSi1 Channel--Enhancement  
AO4812


30V 6.2A 1.78W 22mO@10V,5A 2 N-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 5100
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AUD 0.3215
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SSM3K35AMFV,L3F


MOSFET LowON Res MOSFET ID=.25A VDSS=20V
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Toshiba 4748
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AUD 0.0311
Multiples of: 5

250 mA20 V750 mOhmsN - Channel 350 mV-+ 150 C500 mWSmd/SmtVESM - 3Cut TapeSi1 Channel10 V340 pCEnhancement  
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