MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IQE022N06LM5CGATMA1


MOSFETs N
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Infineon 4848
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AUD 1.8646
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151 A60 V2.2 mOhmsN - Channel 2.3 V- 55 C+ 175 C100 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V53 nCEnhancement  
TQM300NB06CR RLG


MOSFET 60V 27A Single N-Channel Power MOSFET
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Taiwan Semiconductor 4846
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AUD 0.6033
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           Cut Tape       
BSC018NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 29A; 69W; PG-TDSON-8
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Infineon 4846
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AUD 0.6203
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            Optimos      
PJQ4435EP-AU_R2_002A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 4845
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AUD 0.4726
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45 A30 V12.5 mOhmsP - Channel 2.5 V- 55 C+ 175 C41 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V34 nCEnhancementAEC - Q101 
PJQ4546VP-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 4845
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AUD 0.6222
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61 A40 V6.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C42 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
TQM070NH04LCR RLG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4845
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AUD 0.7714
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54 A40 V7 mOhmsN - Channel 2.2 V- 55 C+ 175 C46.8 WSMD/SMTPDFN56U - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V11 nCEnhancement PerFET
IPB65R310CFD


MOSFET CoolMOS 650V 310mOhm CFD2 N-Chan MOSFET
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Infineon 4845
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AUD 2.0169
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11.4 A650 V280 mOhmsn - channel 3.5 V- 55 C+ 150 C104.2 Wsmd/smtD2PAKReelsi1 channel20 V41 nCenhancement coolmos
IQDH29NE2LM5CGSCATMA1


MOSFETs TRENCH <= 40V
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Infineon 4845
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AUD 3.0962
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789 A25 V290 uOhmsN - Channel 2 V- 55 C+ 150 C278 WSMD/SMT Reel , Cut TapeSi1 Channel- 16 V , + 16 V88 nCEnhancement OptiMOS
STS13N3LLH5


MOSFET N-Ch 30V 0.006 Ohm 13A STripFET V
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STMicroelectronics 4844
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AUD 1.0794
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13 A30 V6.6 mOhmsN - Channel  - 55 C+ 150 C2.7 WSmd/SmtSO - 8ReelSi      
HP8KC7TB1


MOSFETs 60V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC7 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4817
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AUD 2.1015
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24 A60 V11.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C26 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V22 nCEnhancement  
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