MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ065N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
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Infineon 5836
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AUD 0.3563
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            Optimos      
IPT026N12NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 4850
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AUD 5.7323
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           Reel , Cut Tape       
TQM019NH04CR-V RLG


MOSFETs 40V, 100A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4850
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AUD 5.76
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100 A40 V1.9 mOhmsN - Channel 3 V- 55 C+ 175 C150 WSMD/SMTPDFN - 56Reel , Cut TapeSi1 Channel- 20 V , + 20 V89 nCEnhancementAEC - Q101PerFET
STF42N65M5


Transistor: N-MOSFET; unipolar; 650V; 20.8A; 40W; TO220FP
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STMicroelectronics 4850
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AUD 7.6679
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   N Channel               
BSC105N10LSF G


Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
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Infineon 4850
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AUD 8.0226
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90 A100 V10.5 mOhmsn - channel  - 55 C+ 150 C156 Wsmd/smtTDSON - 8Reelsi1 channel20 V enhancement optimos
TSM120NA03CR RLG


MOSFET Power MOSFET N-CHL 30V 39A 11.7mOhm
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Taiwan Semiconductor 4849
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AUD 0.3596
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39 A30 V11.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C33 WSmd/SmtPDFN - 56 - 8Cut TapeSi1 Channel20 V9.2 nCEnhancement  
RQ3E180BNTB


Trans MOSFET N-CH 30V 18A 8-Pin HSMT EP T/R
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ROHM 4849
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AUD 0.4739
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39 A30 V2.8 mOhmsN - Channel 1 V- 55 C+ 150 C20 WSmd/SmtH SMT - 8Cut TapeSi1 Channel20 V72 nCEnhancement  
BSC076N04NDATMA1


MOSFET TRENCH <= 40V
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Infineon 4849
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AUD 1.3088
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           Cut Tape       
PSMN1R1-30EL,127


MOSFET N-Ch 30V 1.3 mOhms
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Nexperia 4849
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AUD 3.2416
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120 A30 V1.3 mOhmsn - channel 1.7 V- 55 C+ 175 C338 Wsmd/smtI2PAKTubesi1 channel20 V243 nC   
IPG20N06S2L50AATMA1


MOSFET N-Ch 55V 20A TDSON-8
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Infineon 4848
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AUD 0.7899
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