MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPH1400CQ5,LQ


MOSFETs 150V UMOS10-H SOP Advance(N) 14.1mohm
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Toshiba 4845
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AUD 1.2194
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77 A150 V14.1 mOhmsN - Channel 4.5 V + 175 C170 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31 nCEnhancement  
STS13N3LLH5


MOSFET N-Ch 30V 0.006 Ohm 13A STripFET V
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STMicroelectronics 4844
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AUD 1.034
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13 A30 V6.6 mOhmsN - Channel  - 55 C+ 150 C2.7 WSmd/SmtSO - 8ReelSi      
IRFBC30APBF-BE3


MOSFET 600V N-CH HEXFET
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Vishay 4844
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AUD 1.7124
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3.6 A600 V2.2 OhmsN - Channel 4.5 V- 55 C+ 150 C74 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V23 nCEnhancement  
R6024ENXC7G


MOSFET 600V POWER MOSFET
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ROHM 4844
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AUD 5.0192
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24 A600 V165 mOhmsN - Channel 4 V- 55 C+ 155 C74 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V70 nCEnhancement  
ISC026N03L5SATMA1


MOSFET TRENCH <= 40V
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Infineon 4843
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AUD 0.6538
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           Cut Tape       
IQE220N15NM5ATMA1


MOSFETs TRENCH >=100V
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Infineon 4843
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AUD 1.76
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           Reel , Cut TapeSi     OptiMOS
TQM019NH04LCR RLG


MOSFETs 40V, 100A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 4842
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AUD 2.09
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100 A40 V1.9 mOhmsN - Channel 2.2 V- 55 C+ 175 C150 WSMD/SMTPDFN - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V49 nCEnhancement  
NCE2302


MOSFET N Trench 20V 4A 1.2V @ 250uA 59 mΩ @ 2.5A,2.5V SOT-23 (SOT-23-3) RoHS
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NCE Power 4801
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AUD 0.0439
Multiples of: 10

                   
SI7884BDP-T1-GE3


MOSFET 40V 58A 46W 7.5mohm @ 10V
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Vishay 4253
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AUD 1.13
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58 A40 V7.5 mOhmsN - Channel 1 V- 55 C+ 150 C46 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel10 V51 nCEnhancement Trenchfet
WNM2016A


SOT-23 MOSFETs ROHS
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TECH PUBLIC 2366
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AUD 0.0544
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