MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IQD009N06NM5SCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 7542
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AUD 3.5627
Multiples of: 1

445 A60 V900 uOhmsN - Channel 3.3 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V120 nCEnhancement OptiMOS
WSD3043DN


30V 16A 2.1W 15mΩ@10V,8A 2.5V@250uA 1PCSN-Channel&1PCSP-Channel DFN3X3-8 MOSFETs ROHS
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Winsok 5398
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AUD 0.2164
Multiples of: 5

                   
FDMS7670


MOSFET 30V 42A N-Channel PowerTrench
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ON Semiconductor 4827
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AUD 0.5976
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWER 56Reel       
TSM60NB1R4CP ROG


MOSFET 600V 3A Single N-Cha nnel Power MOSFET
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Taiwan Semiconductor 4826
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AUD 1.8981
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           Cut Tape       
IQDH35N03LM5ATMA1


MOSFETs N
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Infineon 4826
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AUD 3.1385
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700 A30 V350 uOhmsN - Channel 2 V- 55 C+ 150 C278 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V91 nCEnhancement  
MOT3390J


30V 30A 7.4m@10V,15A 40W 2.2V@250uA 1PCSPChannel PDFN3x3 MOSFETs ROHS
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MOT 4825
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AUD 0.2339
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WSP6047


60V 4A 64mΩ@10V,4A 2W 1.74V@250uA P Channel SO-8 MOSFETs ROHS
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Winsok 4824
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AUD 0.2739
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IPN60R600P7SATMA1


Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
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Infineon 4598
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AUD 0.3546
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            Coolmos P7      
IPB072N15N3 G


MOSFET OptiMOS 3 PWR TRANST 150V 100A
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Infineon 4453
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AUD 1.1749
Multiples of: 1

100 A150 V7.2 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263ReelSi1 Channel10 V70 nCEnhancement Optimos
NCEP3040Q


30V 40A 6.8mΩ@10V,20A 25W 1.5V@250uA N Channel PDFN-8(3.1x3.2) MOSFETs ROHS
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NCE Power 2211
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AUD 0.1999
Multiples of: 5

                   
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