MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4292E


MOSFET N Trench 100V 8A 2.7V @ 250uA 23 mΩ @ 8A,10V SOIC-8_150mil RoHS
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Alpha & Omega 4817
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AUD 0.355
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Hot TSM055N03PQ56 RLG


MOSFET 30V N 80Amp 5,5mohm channel Mosfet
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Taiwan Semiconductor 4809
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AUD 0.4384
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80 A30 V4.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C74 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V11.1 nCEnhancement  
HP8KC7TB1


MOSFETs 60V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC7 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4807
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AUD 2.1179
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24 A60 V11.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C26 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V22 nCEnhancement  
1N65G-AA3-R


MOSFET N Channel 650V 1.2A(Tc) 4V @ 250uA 12.5O @ 600mA,10V SOT-223 RoHS
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Unisonic 4806
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AUD 0.1181
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ISZ028N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Infineon 4806
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AUD 0.6097
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128 A30 V2.8 mOhmsN - Channel 2.35 V- 55 C+ 175 C83 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V27 nCEnhancement StrongIRFET
IQE220N15NM5CGATMA1


MOSFETs TRENCH >=100V
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Infineon 4806
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AUD 1.7286
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           Reel , Cut TapeSi     OptiMOS
FDMC86160


DFN5x6-8L MOSFETs ROHS
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Leiditech 4799
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AUD 0.7044
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RH6P040BHTB1


MOSFET NCH 100V 40A MOSFET
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ROHM 4798
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AUD 1.4119
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40 A100 V15.6 mOhmsN - Channel 4 V- 55 C+ 150 C59 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V16.7 nCEnhancement  
RD3H160SPFRATL


MOSFET Pch -45V Vdss -16A TO-252(DPAK); TO-252
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ROHM 4797
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AUD 1.0754
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16 A45 V50 mOhmsP - Channel - 3 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut Tape 1 Channel20 V16 nCEnhancement  
NCE40P20Q1


DFN-8L(3.3x3.3) MOSFETs ROHS
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NCE Power 4748
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AUD 0.5188
Multiples of: 5

                   
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