MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN601VK-7


Diodes Incorporated MOSFET Dual N-Channel
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Diodes Incorporated 4963
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AUD 0.0995
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800 mA60 V3 OhmsN - Channel20 V2.5 V- 65 C+ 150 C250 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel20 V Enhancement  
DMP2035UVTQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 4963
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AUD 0.213
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6 A20 V35 mOhmsP - Channel 400 mV- 55 C+ 150 C2 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel- 4.5 V15.4 nCEnhancementAec - Q101 
IRL100HS121


Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
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Infineon 4960
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AUD 0.426
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            Optimos 5      
DMPH6023SK3-13


MOSFET MOSFETBVDSS: 41V-60V
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Diodes Incorporated 4960
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AUD 0.6286
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35 A60 V33 mOhmsP - Channel 3 V- 55 C+ 175 C3.2 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V53.1 nCEnhancement  
RH6P040BHTB1


MOSFET NCH 100V 40A MOSFET
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ROHM 4960
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AUD 1.4824
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40 A100 V15.6 mOhmsN - Channel 4 V- 55 C+ 150 C59 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V16.7 nCEnhancement  
MSK30N03DF


30V 30A 12mΩ@10V,10A 20W 2.5V@250uA 65pF@15V N Channel 572pF@15V 7.2nC@4.5V -55℃~+150℃@(Tj) DFN3X3-8L MOSFETs ROHS
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MSKSEMI 4959
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AUD 0.3009
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WST3427


20V 2.5A 140mO@4.5V,2A 1W P Channel SOT-23N MOSFETs ROHS
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Winsok 4956
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AUD 0.0384
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AO4480


SOP-8 MOSFETs ROHS
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Youtai 4956
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AUD 0.1678
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ZXMP6A17E6QTA


Diodes Incorporated MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC
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Diodes Incorporated 4955
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AUD 0.3038
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- 3 A- 60 V130 mOhmsP - channel - 3 V- 55 C+ 150 C1.92 WSmd/smtSOT - 26 - 6Reel  20 V17.7 nCEnhancement  
STF13NM60N


Transistor: N-MOSFET; unipolar; 600V; 6.93A; 25W; TO220FP
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STMicroelectronics 4954
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AUD 0.6784
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