MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE0110K


MOSFET N Trench 100V 9.6A 2.5V @ 250uA 140 mΩ @ 6A,10V TO-252-2 (DPAK) RoHS
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NCE Power 4987
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AUD 0.1464
Multiples of: 2

                   
TMN30120D


TO-252-3L MOSFETs ROHS
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Tritech-MOS 4986
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AUD 0.2143
Multiples of: 5

                   
DMN30H4D0LFDE-7


MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
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Diodes Incorporated 4985
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AUD 0.2986
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550 mA300 V2.3 OhmsN - Channel 1 V- 55 C+ 150 C1.98 WSmd/SmtU - DFN2020 - E - 6Cut TapeSi1 Channel20 V7.6 nCEnhancement  
AOD2610


60V 50A 12mO@10V,20A 3W N Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 4981
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AUD 0.5325
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S65N06F


60V 65A 8mΩ 2.5V N Channel PDFN(5x6) MOSFETs ROHS
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HL 4980
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AUD 0.2528
Multiples of: 5

                   
TPM3134NX3


20V 950mA 200mO@4.5V,550mA 150mW N Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC 4979
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AUD 0.0293
Multiples of: 20

                   
SSM5N15FE(TE85L,F)


N-Channel 30 V 100mA (Ta) 150mW (Ta) Surface Mount ESV
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Toshiba 4979
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AUD 0.0971
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100 mA30 V4 OhmsN - Channel 1.5 V  150 mWSmd/SmtSOT - 553 - 5ReelSi2 Channel     
TSM260P02CX RFG


MOSFET MOSFET, Single P-Ch, -20V, -6.5A
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Taiwan Semiconductor 4979
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AUD 0.8346
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6.5 A20 V21 mOhmsP - Channel 300 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V19.5 nCEnhancement  
WNM2016A


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4976
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AUD 0.0517
Multiples of: 10

                   
IPB64N25S3-20


MOSFET Infineon MOSFETs
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Infineon 4947
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AUD 5.4825
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64 A250 V17.5 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263ReelSi1 Channel20 V89 nCEnhancementAec - Q101 
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