MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3013SFV-7


DMP3013 Series 30 V 12 A P-Channel Enhancement Mode Mosfet - POWERDI333
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 8356
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AUD 0.2879
Multiples of: 5

35 A30 V8 mOhmsP - Channel 1 V- 55 C+ 150 C31 WSmd/SmtPowerdi3333 - 8 Si1 Channel10 V33.7 nCEnhancement  
DMP21D0UFD-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K
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Diodes Incorporated 4819
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AUD 0.1396
Multiples of: 1

1.14 A20 V1.3 OhmsP - Channel 1.2 V- 55 C+ 150 C930 mWSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel8 V1.5 nCEnhancement  
HYG120P06LR1D


60V 55A 12.5mΩ@10V,20A 75W 1.8V@250uA 195pF@25V P Channel 4.882nF@25V 46.3nC@10V +175℃@(Tj) TO-252-2L MOSFETs ROHS
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HuaYi 4819
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AUD 0.4085
Multiples of: 1

                   
HP8KB7TB1


MOSFETs 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB7 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 4819
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AUD 2.1015
Multiples of: 1

24 A40 V8 mOhmsN - Channel 2.5 V- 55 C+ 150 C26 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V27 nCEnhancement  
DI200N04PQ


MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N
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Diotec 4818
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AUD 2.003
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200 A40 V1.3 mOhmsN - Channel 4 V- 55 C+ 155 C180 WSMD/SMTQFN - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V92 nCEnhancement  
R6014YND3TL1


MOSFETs N CH 650V TO-252 FAST SWITCH
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ROHM 4817
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AUD 2.2985
Multiples of: 1

           Reel , Cut TapeSi      
ZVNL110ASTZ


MOSFET N-Chnl 100V
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Diodes Incorporated 4816
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AUD 0.4203
Multiples of: 1

320 mA100 V3 OhmsN - Channel 750 mV- 55 C+ 150 C700 mWThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
IQE220N15NM5CGATMA1


MOSFETs TRENCH >=100V
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Infineon 4806
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AUD 1.5646
Multiples of: 1

           Reel , Cut TapeSi     OptiMOS
RD3P03BBHTL1


MOSFETs MOSFET
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ROHM 3798
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AUD 1.2494
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35 A100 V23 mOhmsN - Channel 4 V- 55 C+ 150 C50 WSMD/SMTTO - 252 - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.4 nCEnhancement  
IPTG007N06NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 2255
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AUD 5.2701
Multiples of: 1

454 A60 V750 uOhmsN - Channel 3.3 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V209 nCEnhancement  
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