MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN62D0U-7


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 8730
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AUD 0.0491
Multiples of: 3000

380 mA60 V2 OhmsN - Channel 500 mV- 55 C+ 150 C590 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V0.5 nCEnhancement  
DMN3731UFB4-7B


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 4976
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AUD 0.0529
Multiples of: 10

                   
WPM2092A-3/TR


DFN-3L(1x0.6) MOSFETs ROHS
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Will Semiconductor 4976
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AUD 0.0542
Multiples of: 10

                   
HSL0107


100V 1.5A 520mΩ@10V,1A 1.5W 1.5V@250uA 20pF@15V P Channel 553pF@15V 4.5nC@4.5V -55℃~+150℃@(Tj) SOT-223 MOSFETs ROHS
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HUASHUO 4976
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AUD 0.1157
Multiples of: 5

                   
RV2C010UNT2L


ROHM Semiconductor MOSFET
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ROHM 4971
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AUD 0.1202
Multiples of: 5

1 A20 V470 mOhmsN - Channel 300 mV- 55 C+ 150 C400 mWSmd/SmtDFN - 1006 - 3ReelSi1 Channel4.5 V Enhancement  
SI1026X-T1-GE3


MOSFET 60V Vds 20V Vgs SC89-6
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Vishay 4971
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AUD 0.2746
Multiples of: 5

         Smd/SmtSC - 89 - 6Cut TapeSi     Trenchfet
DMN2990UFB-7B


MOSFET MOSFET
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Diodes Incorporated 4969
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AUD 0.0681
Multiples of: 1

           Cut Tape       
HSBB0210


100V 2.8A 100mΩ@10V,2A 12.5W 2.3V@250uA 2 N-Channel PRPAK(3x3) MOSFETs ROHS
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HUASHUO 4968
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AUD 0.1801
Multiples of: 5

                   
IQE065N10NM5CGATMA1


MOSFET TRENCH >=100V
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Infineon 4967
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AUD 1.8223
Multiples of: 1

85 A100 V6.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C100 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
NVMYS012N10MCLTWG


MOSFETs MOSFET - Power, Single N-Channel 100 V, 12.2 mohm, 52 A
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ON Semiconductor 4966
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AUD 1.0172
Multiples of: 1

52 A100 V18.3 mOhmsN - Channel 3 V- 55 C+ 175 C72 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancement  
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