MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
APG032N04G


PDFN5X6 MOSFETs ROHS
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Quan Li 4850
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AUD 0.6026
Multiples of: 5

                   
FDS4675


Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
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ON Semiconductor 4850
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AUD 0.6118
Multiples of: 50

   P Channel               
BSC010NE2LSIATMA1


MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
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Infineon 4850
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AUD 0.6129
Multiples of: 5000

100 A25 V900 uOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtTDSON - 8ReelSi1 Channel20 V78 nCEnhancement Optimos
SI4896DY-T1-E3


N-Channel 80 V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
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Vishay 4850
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AUD 0.6194
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8ReelSi     Trenchfet
TPH6R008QM,LQ


MOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm
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Toshiba 4850
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AUD 0.6462
Multiples of: 1

107 A60 V , 80 V6 mOhmsN - Channel 3.5 V + 175 C135 WSMD/SMTSOP - 8ReelSi1 Channel- 20 V , + 20 V38 nCEnhancement  
SI4156DY-T1-GE3


MOSFET 30V 24A 6.0W 6.0mohm @ 10V
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Vishay 4850
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AUD 0.653
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8ReelSi     Trenchfet
EFC6612R-TF


ON Semiconductor MOSFET NCHNCH 23A 20V 4.4M OHM
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ON Semiconductor 4816
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AUD 0.5894
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 20 V4.2 mOhms , 4.2 mOhmsn - channel 500 mV- 55 C+ 150 C2.5 Wsmd/smtCSP - 6Reelsi2 channel12 V27 nC , 27 nCenhancement  
BSC018NE2LSIATMA1


Transistor: N-MOSFET; unipolar; 25V; 29A; 69W; PG-TDSON-8
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Infineon 3303
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AUD 0.8201
Multiples of: 1

            Optimos      
IPD050N03L G


MOSFET N-CH 30V 50A 5mOhms
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Infineon 1343
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AUD 0.5549
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50 A30 V4.2 mOhmsN - Channel 1 V- 55 C+ 175 C68 WSmd/SmtTO - 252ReelSi1 Channel20 V31 nCEnhancement Optimos
IPD040N03LGATMA1


Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
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Infineon 427
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AUD 0.554
Multiples of: 1

            Optimos 3      
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