MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC050N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
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Infineon 10868
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AUD 0.4166
Multiples of: 1

            Optimos 3      
BSC050N04LSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
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Infineon 5230
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AUD 0.44
Multiples of: 1

            Optimos 3      
NDS9948


Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
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ON Semiconductor 4850
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AUD 0.4011
Multiples of: 2500

            Powertrench®      
DMN4031SSD-13


MOSFET MOSFET BVDSS: 31V-40 SO-8,2.5K
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Diodes Incorporated 4850
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AUD 0.4052
Multiples of: 2500

7 A40 V31 mOhmsN - Channel  - 55 C+ 150 C1.42 WSmd/SmtSO - 8ReelSi2 Channel20 V18.6 nCEnhancement  
IRLL110TRPBF


MOSFET N-Chan 100V 1.5 Amp
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Vishay 4850
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AUD 0.6075
Multiples of: 1000

1.5 A100 V540 mOhmsN - Channel 1 V- 55 C+ 150 C3.1 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel1 V6.1 nCEnhancement  
BSC886N03LS G


Infineon Technologies MOSFET N-Ch 30V 65A TDSON-8
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Infineon 4850
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AUD 0.4121
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65 A30 V6 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtTDSON - 8Reelsi1 channel20 V enhancement  
PJQ4530P-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 4850
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AUD 0.4164
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           Reel , Cut TapeSi    AEC - Q101 
SI4936CDY-T1-GE3


MOSFET 30V 5.8A 2.3W 40mohm @ 10V
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Vishay 4850
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AUD 0.4757
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel       
PJQ4528P-AU_R2_002A1


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 4840
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AUD 0.4761
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55 A30 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C32 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.7 nCEnhancementAEC - Q101 
DMN10H100SK3-13


Diodes Incorporated MOSFET 100V N-Ch Enh FET 100mOhm 3V
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Diodes Incorporated 2327
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AUD 0.4663
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18 A100 V100 mOhmsN - Channel 1 V- 55 C+ 150 C37 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V25.2 nCEnhancement  
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