MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMFS4821NT1G


N-Channel 30 V 8.8A (Ta), 58.5A (Tc) 870mW (Ta), 38.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ON Semiconductor 5357
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AUD 0.4278
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   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8 FLReel       
SI9407AEY


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 5353
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AUD 0.3095
Multiples of: 5

                   
FS2312


null 6.8A 1.2W SOT-23 MOSFETs ROHS
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FUXINSEMI 5352
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AUD 0.0515
Multiples of: 10

                   
IQE220N15NM5SCATMA1


MOSFETs TRENCH >=100V
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Infineon 5344
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AUD 1.8683
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           Reel , Cut TapeSi     OptiMOS
RQ3L070BGTB1


MOSFETs NCH 60V 20A, HSMT8G
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ROHM 5343
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AUD 0.6303
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20 A60 V24.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C15 WSMD/SMTH SMT - 8GReel , Cut TapeSi1 Channel- 20 V , + 20 V7.6 nCEnhancement  
IPD42DP15LMATMA1


150V 420mO@8.2A,10V P Channel TO-252-3 MOSFETs ROHS
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Infineon 5338
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AUD 0.976
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9 A150 V420 mOhmsP - Channel 2 V- 55 C+ 175 C83 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V43 nCEnhancement  
STD100N10F7


STMicroelectronics MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 120W
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STMicroelectronics 5337
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AUD 1.0601
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80 A100 V8 mOhmsN - Channel  - 55 C+ 175 C120 WSmd/SmtDPAK - 3ReelSi1 Channel 56 nC  Stripfet
IRFBG20PBF-BE3


N-Channel 1000V 1.4A (Tc) 54W (Tc) Through Hole TO-220AB
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Vishay 5335
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AUD 1.1697
Multiples of: 1

1.4 A1 kV11 OhmsN - Channel 4 V- 55 C+ 150 C54 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V38 nCEnhancement  
SP2301BT2


SOT-23 MOSFETs ROHS
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Siliup 5335
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AUD 0.0126
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BSS123


100V 200mA 3O@10V,2mA 350mW N Channel SOT-23 MOSFETs ROHS
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FUXINSEMI 5335
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AUD 0.0167
Multiples of: 50

                   
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