MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002DW


null 230mA 1.4@4.5V,200mA 150mW 1.5V@250uA SOT-363 MOSFETs ROHS
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Siliup 5529
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AUD 0.0279
Multiples of: 20

                   
SIDR622DP-T1-GE3


MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC
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Vishay 5529
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AUD 2.5902
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64.6 A150 V17.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C125 WSmd/SmtPOWERPAK - SO - 8DC - 8Cut TapeSi1 Channel10 V27 nCEnhancement Trenchfet
EFC8811R-TF


MOSFET NCH+NCH 2.5V DRIVE S
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ON Semiconductor 5523
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AUD 0.5298
Multiples of: 1

27 A12 V6.3 mOhmsN - Channel 500 mV + 150 C2.5 WSmd/SmtCSP - 6ReelSi2 Channel+/- 8 V100 nCEnhancement  
FDME820NZT


MOSFET N-channel PowerTrench MOSFET
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ON Semiconductor 5518
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AUD 0.6109
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9 A20 V18 mOhmsn - channel  - 55 C+ 150 C2.1 Wsmd/smtMICRO - FET 1.6 x 1.6Reelsi1 channel    powertrench
TMGN10080D


TO-252-3L MOSFETs ROHS
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Tritech-MOS 5512
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AUD 0.4814
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BSZ075N08NS5


MOSFET TRENCH 40<-<100V
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Infineon 5512
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AUD 0.7114
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SP2300T2


SOT-23 MOSFETs ROHS
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Siliup 5509
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AUD 0.0212
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FDT458P


Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223
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ON Semiconductor 5428
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AUD 0.4435
Multiples of: 1

            Powertrench®      
FDN360P


Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
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ON Semiconductor 5189
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AUD 0.1369
Multiples of: 5

   P Channel               
IRLML6346TRPBF


MOSFET N Trench 30V 3.4A 1.1V @ 10uA 63 mΩ @ 3.4A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 2856
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AUD 0.1011
Multiples of: 5

3.4 A30 V63 mOhmsN - Channel    1.3 WSmd/SmtSOT - 23ReelSi1 Channel12 V2.9 nC   
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