MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3008SFGQ-13


MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A
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Diodes Incorporated 5626
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AUD 0.5645
Multiples of: 3000

- 8.6 A- 30 V25 mOhmsP - Channel - 2.1 V- 55 C+ 150 C2.2 WSmd/SmtPOWERDI - 3333ReelSi1 Channel+/- 20 V47 nCEnhancementAec - Q101 
SI1411DH-T1-BE3


P-Channel 150V 420mA (Ta) 1W (Ta) Surface Mount SC-70-6
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Vishay 5626
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AUD 0.6654
Multiples of: 1

          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®Mosfet (Metal Oxide)      
BSZ22DN20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 7A; 34W; PG-TSDSON-8
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Infineon 5623
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AUD 0.6403
Multiples of: 1

            Optimos 3      
TPN3300ANH,LQ(S


Trans MOSFET N-CH 100V 21A 8-Pin TSON EP
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Toshiba 5616
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AUD 0.4123
Multiples of: 1

                   
SiR108DP-T1-RE3


MOSFET 100V Vds 20V Vgs PowerPAK SO-8
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Vishay 5616
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AUD 1.1791
Multiples of: 1

45 A100 V13.5 mOhmsN - Channel 2 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V41.5 nCEnhancement  
Hot TP2104N3-G


Transistor: P-MOSFET; unipolar; -40V; -0.6A; 740mW; TO92
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Microchip 5615
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AUD 0.6043
Multiples of: 50

175 mA40 V10 OhmsP - Channel 1 V- 55 C+ 150 C740 mWThrough HoleTO - 92BulkSi1 Channel- 4.5 V Enhancement  
SIR5110DP-T1-RE3


MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 12.5 m a. 10V 12.3 m a. 7.5V
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Vishay 5512
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AUD 1.2494
Multiples of: 1

47.6 A100 V12.5 mOhmsN - Channel 4 V- 55 C+ 150 C59.5 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.8 nCEnhancement  
SQS183ENW-T1_GE3


MOSFETs P-CHANNEL 150-V (D-S) 175C MOSFET
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Vishay 4912
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AUD 0.5894
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   N - Channel  - 55 C  SMD/SMT  Si1 Channel     
HT8KE6TB1


MOSFETs 100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 218
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AUD 1.1049
Multiples of: 1

13 A100 V83 mOhmsN - Channel 2.5 V- 55 C+ 150 C14 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V6.7 nCEnhancement  
PSMN016-100BS,118


N-Channel 100 V 57A (Tj) 148W (Tc) Surface Mount D2PAK
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Nexperia 115
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AUD 1.1066
Multiples of: 1

57 A100 V28.8 mOhmsN - Channel    148 WThrough HoleD2PAKReelSi1 Channel4.5 V    
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