MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI8816EDB-T2-E1


Vishay Semiconductors MOSFET 30V 109mOhm10V 2.3A N-Ch
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Vishay 5820
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AUD 0.2107
Multiples of: 3000

2.3 A30 V109 mOhmsN - Channel 0.6 v to 1.4 V- 55 C+ 150 C900 mWSmd/SmtMICRO - FOOT - 4ReelSi 12 V2.4 nCEnhancement Trenchfet Power Mosfet
SSM6J424TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-20V VGSS=+6-8V ID=-6.0A RDSON=0.0225Ohm @ 4.5V in UF6 package
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Toshiba 5820
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AUD 0.2173
Multiples of: 1

           Cut Tape       
SI1416EDH-T1-GE3


30V 3.9A 58mO@10V,3.1A 2.8W N Channel SC-70-6(SOT-363) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 5820
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AUD 0.2183
Multiples of: 3000

3.9 A30 V58 mOhmsN - Channel12 V1.4 V- 55 C+ 150 C2.8 WSmd/SmtSC - 70 - 6ReelSi1 Channel10 V7.5 nCEnhancement Trenchfet
FDC637BNZ


Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
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ON Semiconductor 5820
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AUD 0.2194
Multiples of: 3000

            Powertrench®      
DMN3033LDM-7


30V 6.9A 33mO@6.9A,10V 2W null SOT-26 MOSFETs ROHS
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Diodes Incorporated 5820
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AUD 0.2308
Multiples of: 3000

6.9 A30 V25 mOhmsN - Channel 2.1 V- 55 C+ 150 C2 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel20 V13 nCEnhancement  
BSR315PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
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Infineon 5820
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AUD 0.23
Multiples of: 3000

            Sipmos      
DMN61D8LVTQ-7


Diodes Incorporated MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson
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Diodes Incorporated 5820
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AUD 0.2327
Multiples of: 3000

630 mA60 V2.4 OhmsN - Channel 1.3 V- 55 C+ 150 C1.09 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel+/- 12 V0.74 nCEnhancementAec - Q101 
DMG1016VQ-7


MOSFET Comp Pair Enh FET 20Vdss 6Vgss
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Diodes Incorporated 5820
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AUD 0.2454
Multiples of: 3000

         Smd/SmtSOT - 563 - 6Cut TapeSi    Aec - Q101 
SI1302DL-T1-GE3


MOSFET 30V Vds 20V Vgs SC70-3
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Vishay 5755
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AUD 0.2137
Multiples of: 1

           Cut TapeSi     Trenchfet
SI8806DB-T2-E1


MOSFET 12V 3.9A 0.9W 4.3mOhms @ 4.5V
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.2217
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT - 1ReelSi     Microfoot Trenchfet
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