MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3J375F,LXHF


MOSFET P Channel -20V -2A AECQ MOSFET
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Toshiba 5642
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AUD 0.1615
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2 A20 V150 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSMD/SMTS - M in I - 3Reel , Cut TapeSi1 Channel- 8 V , + 6 V4.6 nCEnhancementAEC - Q101 
PJD55N04S-AU_L2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 5642
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AUD 1.045
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87 A40 V5.3 mOhmsN - Channel 2.3 V- 55 C+ 175 C71 WSMD/SMTTO - 252AA - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V20 nCEnhancementAEC - Q101 
R6020ENXC7G


MOSFETs TO220 600V 20A N-CH MOSFET
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ROHM 5636
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AUD 4.0857
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20 A600 V196 mOhmsN - Channel 4 V- 55 C+ 155 C68 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , 20 V60 nCEnhancement  
TSM4806CS RLG


MOSFET 20V, 28A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 5635
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AUD 0.253
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28 A20 V16 mOhmsN - Channel 600 mV- 55 C+ 150 C2 WSmd/SmtSOP - 8Cut TapeSi1 Channel4.5 V12.3 nCEnhancement  
NCEP01ND35AG


100V 35A 18mΩ@10V,20A 50W 2 N-Channel DFN-8(4.9x5.8) MOSFETs ROHS
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NCE Power 5632
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AUD 0.7874
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RSE002P03TL


MOSFET P-CH 30V 200MA SOT416
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ROHM 5630
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AUD 0.2068
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200 mA30 V1.6 OhmsP - Channel    150 mWSmd/SmtUMT - 3ReelSi1 Channel20 V Enhancement  
HYG019N06LS1C2


PDFN5x6-8L MOSFETs ROHS
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HuaYi 5626
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AUD 0.8972
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SQ4410EY-T1_BE3


MOSFET N-CHANNEL 30 V
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Vishay 5626
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AUD 1.004
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15 A30 V9 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V53 nCEnhancement TrenchFET
DMP3008SFGQ-13


MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A
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Diodes Incorporated 5626
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AUD 0.5645
Multiples of: 3000

8.6 A30 V25 mOhmsP - Channel 2.1 V- 55 C+ 150 C2.2 WSMD/SMTPowerdi3333 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V47 nCEnhancementAEC - Q101 
FDC638P


Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
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ON Semiconductor 5005
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AUD 0.4162
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