MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ6E045TNTR


MOSFET NCH 30V 4.5A SMALL SIGNAL
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ROHM 5695
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AUD 0.3538
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4.5 A30 V43 mOhmsN - Channel 500 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel12 V7.6 nCEnhancement  
QH8KE5TCR


MOSFETs 100V 2.0A, Dual Nch+Nch, TSMT8, Power MOSFET: The Power MOSFET QH8KE5 is suitable for switching power supply and motor drive.
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ROHM 5693
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AUD 0.4062
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2 A100 V202 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V2.8 nCEnhancement  
SIRA60DP-T1-UE3


MOSFETs N-Channel 30 V (D-S) MOSFET 150 C 0.94 m 10V 1.35 m 4.5V
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Vishay 5693
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AUD 1.031
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100 A30 V940 uOhmsN - Channel 2.2 V- 55 C+ 150 C57 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V83 nCEnhancement  
PSMQC074N10NS2_R2_00201


MOSFETs 100V 7.4m ohms Excellent low FOM MOSFET for DC to DC Converter Application
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Panjit 5693
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AUD 1.15
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64 A100 V7.4 mOhmsN - Channel 3.8 V- 55 C+ 175 C SMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V24 nCEnhancement  
STL12N65M5


MOSFET N-CH 650V 0.42 Ohm 8.5A MDmesh V
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STMicroelectronics 5693
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AUD 2.4079
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8.5 A650 V530 mOhmsN - Channel 5 V  48 WSmd/SmtPowerflat - 4 5X6ReelSi1 Channel 17 nC   
RQ5E030AJTCL


MOSFET Nch 30V 3Ad Si MOSFET
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ROHM 5691
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AUD 0.2101
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3 A30 V57 mOhmsN - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346 - 3Cut TapeSi1 Channel12 V2.1 nCEnhancement  
WST2337


SOT-23N MOSFETs ROHS
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Winsok 5689
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AUD 0.0804
Multiples of: 5

                   
BSZ0902NS


MOSFET N-Channel 30V MOSFET
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Infineon 5686
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AUD 0.4925
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40 A30 V2.6 mOhmsN - Channel20 V - 55 C+ 150 C48 WSmd/SmtTDSON - 8ReelSi1 Channel20 V26 nC  Optimos
DMN6140LQ-7


MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A
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Diodes Incorporated 5218
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AUD 0.1568
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1.6 A60 V92 mOhmsN - Channel 1 V- 55 C+ 150 C700 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V8.6 nCEnhancementAec - Q101 
BSZ0901NSI


MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
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Infineon 3905
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AUD 0.6469
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40 A30 V2.1 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V41 nC  Optimos
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