MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN62D1LFD-7


MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
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Diodes Incorporated 5975
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AUD 0.0705
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400 mA60 V1.4 OhmsN - Channel20 V1 V- 55 C+ 150 C0.5 WSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel20 V0.55 nCEnhancement Dmn6
TM100N04AD


TO-252-3L MOSFETs ROHS
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Tritech-MOS 5858
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AUD 0.179
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IRF7526D1TRPBF


MOSFET MOSFT PCh w/Schttky -2A 200mOhm 7.5nC
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Infineon 5853
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AUD 0.4138
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2 A30 V200 mOhmsP - Channel    800 mWSmd/SmtMICRO - 8ReelSi1 Channel20 V7.5 nC   
STD4N90K5


MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in a DPAK package
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STMicroelectronics 5852
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AUD 1.3472
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3 A900 V1.9 Ohmsn - channel 3 V- 55 C+ 150 C60 Wsmd/smtTO - 252 - 3 si1 channel30 V5.3 nCenhancement  
CS12N06AE-G


MOSFET N Channel 60V 12A 1.9V @ 250uA 13.5mO @ 12A,10V SOP8 RoHS
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Huajing 5852
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AUD 0.2239
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Hot RW1A020ZPT2R


MOSFET SW MOSFET MID PWR P-CH 12V .7A
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ROHM 5852
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AUD 0.2601
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2 A- 12 V75 mOhmsP - Channel - 1 V- 55 C+ 150 C700 mWSmd/SmtEMT - 6ReelSi1 Channel+/- 10 V6.5 nCEnhancement  
AP2302GN-HF


MOSFET N Trench 20V 3.2A 1.2V @ 250uA 85 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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APEC 5851
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AUD 0.1157
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BSC010N04LSIATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
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Infineon 5851
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AUD 1.4095
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            Optimos      
30P03D


PDFN-8(3x3) MOSFETs ROHS
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Youtai 5849
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AUD 0.12
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RTQ025P02HZGTR


MOSFET -20V P-CHANNEL -2.5A
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ROHM 5848
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AUD 0.4639
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2.5 A20 V100 mOhmsP - Channel 2 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 457T - 6Reel , Cut TapeSi1 Channel- 12 V , + 12 V6.4 nCEnhancementAEC - Q101 
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