MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LN2308LT1G


60V 2.6A null SOT-23 MOSFETs ROHS
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Leshan 5746
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AUD 0.0714
Multiples of: 10

                   
IQE030N06NM5SCATMA1


MOSFET
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Infineon 5746
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AUD 2.7115
Multiples of: 1

21 A60 V3 mOhmsN - Channel 3.3 V- 55 C+ 175 C2.5 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V49 nCEnhancement  
DMN3032LFDBQ-7


MOSFET Dual N-Ch Enh FET 30V 20Vgss 1.0W
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Diodes Incorporated 5744
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AUD 0.2906
Multiples of: 1

         Smd/SmtU - DFN2020 - B - 6Cut TapeSi    Aec - Q101 
AO3415


20V 4.5A 1.5W 40mΩ@10V,4.5A 1V@250uA P Channel SOT-23-3L MOSFETs ROHS
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MSKSEMI 5743
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AUD 0.0436
Multiples of: 10

                   
DMC25D0UVT-7


MOSFET 20V Enh Mode FET
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Diodes Incorporated 5743
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AUD 0.1937
Multiples of: 1

400 mA , - 2.6 A25 v , - 30 V4 Ohms , 300 mOhmsN - Channel, P - Channel 650 mV , - 500 mV- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6ReelSi2 Channel8 v , 12 V0.7 nC , 21 nCEnhancement  
PSMQC040N10NS2_R2_00601


MOSFETs 100V 4.4mohm Excellect low FOM MOSFET
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Panjit 5742
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AUD 1.8351
Multiples of: 1

122 A100 V4.4 mOhmsN - Channel 3.8 V- 55 C+ 150 C125 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V40.5 nCEnhancement  
BUK9226-75A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 5742
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AUD 2.0821
Multiples of: 1

45 A75 V24.6 mOhmsN - Channel10 V - 55 C+ 175 C114 WSmd/SmtDPAK - 3ReelSi1 Channel10 V Enhancement  
SIDR610EP-T1-RE3


MOSFETs SOT669 200V 39.6A N-CH MOSFET
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Vishay 5742
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AUD 2.9723
Multiples of: 1

8.9 A200 V334 mOhms  4 V- 55 C+ 175 C7.5 W  Reel , Cut TapeSi - 20 V , + 20 V20 nC   
RXL035N03TCR


MOSFET MOSFET
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ROHM 5732
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AUD 0.5058
Multiples of: 1

3.5 A30 V50 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSOT - 363T - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V3.3 nCEnhancement  
HT8KC6TB1


MOSFETs 60V 15A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 3642
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AUD 1.0655
Multiples of: 1

15 A60 V29 mOhmsN - Channel 2.5 V- 55 C+ 150 C14 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V7.6 nCEnhancement  
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