MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7526D1TRPBF


MOSFET MOSFT PCh w/Schttky -2A 200mOhm 7.5nC
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Infineon 5756
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AUD 0.4039
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2 A30 V200 mOhmsP - Channel    800 mWSmd/SmtMICRO - 8ReelSi1 Channel20 V7.5 nC   
STD4N90K5


MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in a DPAK package
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STMicroelectronics 5755
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AUD 1.1421
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3 A900 V1.9 Ohmsn - channel 3 V- 55 C+ 150 C60 Wsmd/smtTO - 252 - 3 si1 channel30 V5.3 nCenhancement  
SIR582DP-T1-BE3


MOSFETs N-Channel 80 V (D-S) MOSFET 150 C 3.4 m 10V
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Vishay 5755
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AUD 1.2461
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93 A80 V3.4 mOhmsN - Channel 4 V- 55 C+ 150 C92.5 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V44.5 nCEnhancement  
NTMFS2D3N04XMT1G


MOSFETs 40V T10M IN S08FL PACKAGE
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ON Semiconductor 5754
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AUD 0.7307
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111 A40 V2.35 mOhmsN - Channel 3.5 V- 55 C+ 175 C53 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V22.1 nCEnhancement  
DMN3200U-7


Diodes Incorporated MOSFET 650mW 30Vdss
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Diodes Incorporated 5752
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AUD 0.0868
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2.2 A30 V90 mOhmsN - Channel8 V - 55 C+ 150 C650 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
SISS178LDN-T1-UE3


MOSFETs N-CHANNEL 70-V (D-S) MOSFET
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Vishay 5752
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AUD 0.517
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45.3 A70 V9.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C39 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V18.7 nCEnhancement TrenchFET
IQE030N06NM5SCATMA1


MOSFET
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Infineon 5746
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AUD 2.7115
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21 A60 V3 mOhmsN - Channel 3.3 V- 55 C+ 175 C2.5 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V49 nCEnhancement  
BUK9226-75A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 5742
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AUD 2.2143
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45 A75 V24.6 mOhmsN - Channel10 V - 55 C+ 175 C114 WSmd/SmtDPAK - 3ReelSi1 Channel10 V Enhancement  
WST2307


SOT-23-3L MOSFETs ROHS
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Winsok 2832
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AUD 0.0326
Multiples of: 20

                   
STP80NF03L-04


Transistor: N-MOSFET; unipolar; 30V; 80A; 300W; TO220-3
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STMicroelectronics 1962
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AUD 1.2643
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