MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSD221N06TL


ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 22A
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ROHM 5885
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AUD 1.6897
Multiples of: 1

22 A60 V26 mOhmsN - Channel     Smd/SmtCPT - 3ReelSi1 Channel     
TSM900N06CH X0G


MOSFET 60V 11A Single N-Channel Power MOSFET
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Taiwan Semiconductor 5883
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AUD 0.3748
Multiples of: 3750

11 A60 V76 mOhmsN - Channel 1.2 V + 150 C25 WThrough HoleTO - 251S - 3TubeSi1 Channel10 V9.3 nCEnhancement  
SQ4050EY-T1_BE3


MOSFET N-CHANNEL 40V
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Vishay 5880
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AUD 0.7981
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19 A40 V6.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C6 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V34 nCEnhancement TrenchFET
TSM4806CS RLG


MOSFET 20V, 28A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 5873
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AUD 0.2637
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28 A20 V16 mOhmsN - Channel 600 mV- 55 C+ 150 C2 WSmd/SmtSOP - 8Cut TapeSi1 Channel4.5 V12.3 nCEnhancement  
SIR512DP-T1-RE3


MOSFETs SOT669 100V 100A N-CH MOSFET
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Vishay 5872
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AUD 1.4963
Multiples of: 1

100 A100 V4.5 mOhmsN - Channel 4 V   SMD/SMTSO - 8 Si1 Channel- 10 V , + 10 V30.5 nCEnhancement PowerPak
IRLML2502


MOSFET N Trench 20V 4.2A 1.2V @ 50uA 45 mΩ @ 4.2A,4.5V SOT-23 RoHS
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Youtai 5868
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AUD 0.0499
Multiples of: 10

                   
IPL60R225CFD7AUMA1


MOSFET LOW POWER_NEW
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Infineon 5864
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AUD 1.9992
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           Cut Tape       
KIRLML6401TRPBF


12V 4.3A 50mΩ@4.5V,4.3A 1.4W 1V@250uA P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 5862
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AUD 0.0461
Multiples of: 10

                   
HL2312


20V 5.5A 1.2W 25m@4.5V,4.5A 620mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 5860
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AUD 0.0281
Multiples of: 20

                   
DMG3415U-7


MOSFET P-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 5451
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AUD 0.1196
Multiples of: 5

4 A20 V42.5 mOhmsP - Channel 300 mV- 55 C+ 150 C900 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V9.1 nCEnhancement  
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