MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF8714TRPBFXTMA1


MOSFETs TRENCH <= 40V
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Infineon 5770
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AUD 0.2876
Multiples of: 1

14 A30 V8.7 mOhmsN - Channel 2.35 V- 55 C+ 150 C2.5 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V8.1 nCEnhancement  
IRLHM630TRPBF


MOSFET N Trench 30V 21A 1.1V @ 50uA 3.5 mΩ @ 20A,4.5V PQFN 3.3x3.3 RoHS
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Infineon 5769
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AUD 0.7312
Multiples of: 1

40 A30 V3.5 mOhmsN - Channel12 V0.8 V- 55 C+ 150 C2.7 WSmd/SmtPQFN - 8ReelSi1 Channel12 V41 nC   
IPD70R600P7SAUMA1


MOSFET
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Infineon 5768
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AUD 0.4236
Multiples of: 1

8.5 A700 V490 mOhmsN - Channel 2.5 V- 40 C+ 150 C43.1 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 16 V10.5 nCEnhancement Coolmos
YJS10N02A


SOP-8 MOSFETs ROHS
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Yangjie 5766
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AUD 0.0891
Multiples of: 5

                   
SIHP18N50C-E3


N-Channel 500 V 18A (Tc) 223W (Tc) Through Hole TO-220AB
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Vishay 5762
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AUD 2.0522
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18 A500 V225 mOhmsN - Channel 5 V- 55 C+ 150 C223 WThrough HoleTO - 220TubeSi1 Channel30 V65 nCEnhancement  
KRLML6401


12V 4.3A 50m@4.5V,4.3A 1.3W 950mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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KEXIN 5761
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AUD 0.032
Multiples of: 20

                   
SSM6J401TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-30V VGSS=+-20V ID=-2.5A RDSON=0.145Ohm @ 4V in UF6 package
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Toshiba 5761
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AUD 0.1905
Multiples of: 1

2.5 A30 V73 mOhmsP - Channel - 2.6 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel20 V16 nCEnhancement U - Mosiii
DMG3404L-7


MOSFET 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC
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Diodes Incorporated 5756
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AUD 0.1243
Multiples of: 5

5.8 A30 V21 mOhmsN - Channel 1 V- 55 C+ 150 C1.33 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V13.2 nCEnhancement  
SSM3K329R,LF


MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS
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Toshiba 5645
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AUD 0.2873
Multiples of: 5

3.5 A30 V126 mOhmsn - channel 400 mV + 150 C1 Wsmd/smtSOT - 23FReelsi1 channel4 V1.5 nCenhancement  
QS6J1TR


Mosfet Array 2 P-Channel (Dual) 20V 1.5A 1.25W Surface Mount TSMT6 (SC-95)
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ROHM 485
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AUD 0.3057
Multiples of: 1

1.5 A20 V310 mOhmsP - Channel    1.25 WSmd/SmtT SMT - 5ReelSi2 Channel12 V Enhancement  
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