MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPM2030JX


30V 10A DFN2X2-6L MOSFETs ROHS
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Shenzhen JingYang 5766
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AUD 0.2139
Multiples of: 5

                   
PSMQC042N10LS2_R2_00201


MOSFETs 100V 4.2m ohms Excellect low FOM MOSFET for PD3.0 100W solution
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Panjit 5765
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AUD 1.9754
Multiples of: 1

109 A100 V4.2 mOhmsN - Channel 2.3 V- 55 C+ 175 C115 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V58 nCEnhancement  
BSV236SPH6327XT


MOSFET OptiMOS -P Small Signal Transistor
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Infineon 5761
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AUD 0.1116
Multiples of: 1

1.5 A20 V131 mOhmsP - Channel 1.2 V- 55 C+ 150 C560 mWSmd/SmtSOT - 363ReelSi1 Channel12 V- 5.7 nCEnhancement  
SSM6J401TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-30V VGSS=+-20V ID=-2.5A RDSON=0.145Ohm @ 4V in UF6 package
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Toshiba 5761
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AUD 0.1905
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2.5 A30 V73 mOhmsP - Channel - 2.6 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel20 V16 nCEnhancement U - Mosiii
ZXMP4A57E6TA


MOSFET MOSFET BVDSS 31V-40 SOT26,3K
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Diodes Incorporated 5760
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AUD 0.2972
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   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 26Reel       
SSM6P36FE,LM


MOSFET Small Signal MOSFET
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Toshiba 5760
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AUD 0.0885
Multiples of: 1

330 mA20 V3.6 OhmsP - Channel 300 mV + 150 C150 mWSmd/SmtES6 - 6Cut TapeSi2 Channel8 V1.2 nCEnhancement  
QS8M51HZGTR


MOSFETs MOSFET 100V DUAL NCH+PCH
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ROHM 5760
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AUD 0.6277
Multiples of: 1

2 A , 1.5 A100 V325 mOhms , 470 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V4.7 nC , 17 nCEnhancementAEC - Q101 
DMN2058U-7


MOSFET MOSFET BVDSS 8V-24V
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Diodes Incorporated 5752
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AUD 0.0679
Multiples of: 10

         Smd/SmtSOT - 23 - 3Cut TapeSi      
RQ5C020TPTL


MOSFET PCH -20V -2A SMALL SIGNAL
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ROHM 5627
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AUD 0.243
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2 A20 V135 mOhmsP - Channel 700 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel12 V4.9 nCEnhancement  
SSM3K36MFV,L3APF(T


MOSFET N Trench 20V 500mA 1V @ 1mA 630 mΩ @ 200mA,5V VESM RoHS
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Toshiba 4966
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AUD 0.0611
Multiples of: 10

                   
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