MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2025UFDF-7


MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
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Diodes Incorporated 5777
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AUD 0.1625
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6.5 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.6 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel10 V12.3 nCEnhancement  
TM20P06DF


PDFN3x3-8L MOSFETs ROHS
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Tritech-MOS 5776
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AUD 0.1697
Multiples of: 5

                   
IPG20N06S415ATMA2


MOSFET MOSFET
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Infineon 5776
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AUD 1.0934
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   N - Channel     Smd/SmtTDSON - 8Cut TapeSi1 Channel   Aec - Q101 
LSI1012LT1G


MOSFET N Trench 20V 500mA 900mV @ 250uA 700 mΩ @ 600mA,4.5V SOT-23 (SOT-23-3) RoHS
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Leshan 5775
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AUD 0.0278
Multiples of: 20

                   
PJA3416_R1_00001


MOSFET N Trench 20V 5.8A 1.2V @ 250uA 80 mΩ @ 1.6A,1.8V SOT-23 RoHS
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Panjit 5775
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AUD 0.1481
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5.8 A20 V27 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V6.7 nCEnhancement  
AO4406A


SOP-8 MOSFETs ROHS
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JSMSEMI 5771
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AUD 0.1456
Multiples of: 5

                   
SQJ952EP-T1_BE3


MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 5771
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AUD 0.7307
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           Reel , Cut TapeSi      
IRLHM630TRPBF


MOSFET N Trench 30V 21A 1.1V @ 50uA 3.5 mΩ @ 20A,4.5V PQFN 3.3x3.3 RoHS
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Infineon 5769
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AUD 0.7422
Multiples of: 1

40 A30 V3.5 mOhmsN - Channel12 V0.8 V- 55 C+ 150 C2.7 WSmd/SmtPQFN - 8ReelSi1 Channel12 V41 nC   
WSF50N10G


TO-252-3 MOSFETs ROHS
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Winsok 5769
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AUD 0.8333
Multiples of: 1

                   
SISS178LDN-T1-UE3


MOSFETs N-CHANNEL 70-V (D-S) MOSFET
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Vishay 5752
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AUD 0.5122
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45.3 A70 V9.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C39 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V18.7 nCEnhancement TrenchFET
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