MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3E180BNTB1


MOSFET MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 5790
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AUD 1.2462
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39 A30 V3.9 mOhmsN - Channel 2.5 V- 55 C+ 150 C20 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V72 nCEnhancement  
IQE065N10NM5CGSCATMA1


MOSFET
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Infineon 5790
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AUD 3
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13 A100 V6.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , 20 V43 nCEnhancement  
RQ5A030APTL


P-Channel 12 V 3A (Ta) 1W (Ta) Surface Mount TSMT3
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ROHM 5788
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AUD 0.1593
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3 A- 12 V180 mOhmsP - Channel - 300 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346 - 3Reel-1 Channel0 V To - 8 V16 nCEnhancement  
TSM680P06DPQ56 RLG


MOSFET -60V -12A Dual P- Channel Power MOSFET
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Taiwan Semiconductor 5787
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AUD 0.6699
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12 A60 V54 mOhmsP - Channel 1.2 V- 55 C+ 150 C3.5 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V16.4 nCEnhancement  
UT6K3TCR1


MOSFET MOSFET
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ROHM 5787
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AUD 0.7212
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5.5 A30 V42 mOhmsN - Channel 1.5 V + 150 C2 WSMD/SMTDFN - 2020 - 8DReel , Cut TapeSi2 Channel- 12 V , 12 V4 nCEnhancement  
TK055U60Z1,RQ


MOSFETs 600V DTMOS VI TOLL 55mohm
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Toshiba 5786
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AUD 5.4686
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40 A600 V55 mOhmsN - Channel 4 V  270 WSMD/SMT Reel , Cut TapeSi1 Channel- 30 V , 30 V65 nCEnhancement  
IPZ40N04S53R1ATMA1


Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TDSON-8
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Infineon 5783
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AUD 0.7093
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            Optimos 5      
BSZ0589NSATMA1


MOSFET TRENCH <= 40V
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Infineon 5782
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AUD 0.7046
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           Cut Tape      Optimos
BSS84AK-MS


55V 300mA 1W 4.5Ω@10V P Channel SOT-23 MOSFETs ROHS
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MSKSEMI 5781
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AUD 0.0359
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SI4848DY-T1-GE3


MOSFET 150V 3.7A 3.0W 85mohm @ 10V
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Vishay 5568
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AUD 0.6728
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3.7 A 85 mOhmsN - Channel 2 V- 55 C+ 150 C3 WSmd/SmtSO - 8ReelSi1 Channel10 V17 nCEnhancement Trenchfet
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