MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3E180BNTB1


MOSFET MOSFET
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ROHM 5790
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AUD 1.2462
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39 A30 V3.9 mOhmsN - Channel 2.5 V + 150 C20 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V72 nCEnhancement  
IQE065N10NM5CGSCATMA1


MOSFET
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Infineon 5790
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AUD 3
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13 A100 V6.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V43 nCEnhancement  
FDY1002PZ


MOSFET -20V DUAL P-CHAN POWERTRENCH
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ON Semiconductor 5788
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AUD 0.2295
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830 mA20 V500 mOhmsP - Channel  - 55 C+ 150 C625 mWSmd/SmtSC - 89 - 6ReelSi2 Channel8 V Enhancement Powertrench
TSM680P06DPQ56 RLG


MOSFET -60V -12A Dual P- Channel Power MOSFET
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Taiwan Semiconductor 5787
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AUD 0.6699
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12 A60 V54 mOhmsP - Channel 1.2 V- 55 C+ 150 C3.5 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V16.4 nCEnhancement  
UT6K3TCR1


MOSFET MOSFET
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ROHM 5787
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AUD 0.7212
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5.5 A30 V42 mOhmsN - Channel 1.5 V + 150 C2 WSMD/SMTDFN2020 - 8DReel , Cut TapeSi2 Channel- 12 V , + 12 V4 nCEnhancement  
TPH6R003NL,LQ(S


SOP-8 MOSFETs ROHS
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Toshiba 5787
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AUD 0.4416
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BSS159N H6327


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 5786
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AUD 0.1478
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230 mA60 V3.5 OhmsN - Channel 3.5 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel10 V1.4 nCDepletionAec - Q101 
2N7002


MOSFET N Channel 60V 115mA 2.5V @ 250uA 5O @ 500mA,10V SOT-23 RoHS
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High Diode 5771
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AUD 0.0117
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IAUCN08S7N045TATMA1


MOSFETs 80 V, N-Ch, 4.54 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7
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Infineon 5649
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AUD 1.3216
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103 A80 V4.54 mOhmsN - Channel 3.2 V- 55 C+ 175 C98 WSMD/SMTPG - LHDSO - 10 - 1Reel , Cut TapeSi1 Channel20 V27 nCEnhancement OptiMOS
IRF7103PBF-HXY


60V 6.5A 32m 2 N-Channel SOP-8 MOSFETs ROHS
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HXY MOS 5507
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AUD 0.3959
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