MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPT65R033G7XTMA1


MOSFET HIGH POWER_NEW
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Infineon 5815
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AUD 21.041
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69 A650 V33 mOhmsN - Channel 3 V- 55 C+ 150 C391 WSmd/SmtHSOF - 8ReelSi1 Channel+/- 30 V110 nCEnhancement Coolmos
NX3008PBKS.115


Transistor: P-MOSFET; unipolar; -30V; -200mA; 80mW; SOT363
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Nexperia 5813
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AUD 0.18
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SI4532CDY-T1-GE3


MOSFET 30V 6.0/4.3A 2.78W 47/89mohm @ 10V
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Vishay 5812
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AUD 0.4064
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4.3 A , 6 A30 V47 mOhms , 89 mOhmsN And P - Channel 1 V- 55 C+ 150 C2.78 w , 2.78 WSmd/SmtSOIC - 8 NarrowReelSi2 Channel10 V6 nC , 7.8 nCEnhancement Trenchfet
PJC7404_R1_00001


MOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected
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Panjit 5810
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AUD 0.1588
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RQ1E070RPHZGTR


MOSFETs MOSFET 30V PCH -7A
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ROHM 5810
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AUD 0.7034
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7 A30 V17 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V26 nCEnhancementAEC - Q101 
PSMQC098N10LS2_R2_00201


MOSFETs 100V 9.8m ohms Excellect low FOM MOSFET for PD3.0 45W solution
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Panjit 5810
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AUD 0.92
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60 A100 V9.8 mOhmsN - Channel 2.3 V- 55 C+ 175 C83 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25 nCEnhancement  
SQJ844AEP-T1_GE3


MOSFET N-Channel 30V AEC-Q101 Qualified
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Vishay 5809
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AUD 0.7142
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8 A30 V13.8 mOhmsN - Channel 1.5 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel20 V26 nCEnhancementAec - Q101Trenchfet
IAUCN08S7N019TATMA1


MOSFETs 80 V, N-Ch, 1.94 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7
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Infineon 5776
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AUD 2.2
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223 A80 V1.94 mOhmsN - Channel 3.2 V- 55 C+ 175 C180 WSMD/SMTPG - LHDSO - 10 - 2Reel , Cut TapeSi1 Channel20 V68 nCEnhancement OptiMOS
SI01P10-TP


P-Channel 100V 1A (Tj) 770mW Surface Mount SOT-23
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Micro Commercial Components (MCC) 2240
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AUD 0.1609
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          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
AGM314MAP


30V 29.7W 1PCSNChannel+1PCSPChannel PDFN3.3x3.3 MOSFETs ROHS
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AGM-Semi 218
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AUD 0.1064
Multiples of: 5

                   
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