MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB13NM60N


Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
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STMicroelectronics 7760
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AUD 1.908
Multiples of: 1000

            mdmesh      
STL15N65M5


MOSFET N-CH 650V 0.335Ohm 10A MDmesh V
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STMicroelectronics 5820
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AUD 2.4795
Multiples of: 3000

10 A650 V375 mOhmsN - Channel 5 V  52 WSmd/SmtPowerflat - 4 5X6ReelSi1 Channel 22 nC  Mdmesh
IQE008N03LM5CGSCATMA1


MOSFETs N
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Infineon 5820
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AUD 2.0677
Multiples of: 1

           Reel , Cut TapeSi     OptiMOS
SIR668DP-T1-RE3


MOSFET 100V Vds 20V Vgs PowerPAK SO-8
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Vishay 5820
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AUD 1.7672
Multiples of: 3000

95 A100 V4 mOhmsN - Channel 2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V108 nCEnhancement Trenchfet, Powerpak
SI7942DP-T1-GE3


MOSFET Dual N-Ch 100V 49mohm @ 10V
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Vishay 5820
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AUD 2.3955
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
STP75NF20


Transistor: N-MOSFET; unipolar; 200V; 47A; 190W; TO220-3
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STMicroelectronics 5820
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AUD 2.5597
Multiples of: 1000

                   
STH310N10F7-2


STMicroelectronics MOSFET N-CH 100V 2.1mOhm 180A STripFET VI
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STMicroelectronics 5820
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AUD 4.2451
Multiples of: 1000

180 A100 V2.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C315 WSmd/SmtH2PAK - 2ReelSi1 Channel20 V180 nC  Stripfet
SI7431DP-T1-E3


Vishay Semiconductors MOSFET 200V 3.8A 5.4W 174mohm 10V
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Vishay 5820
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AUD 3.7127
Multiples of: 3000

2.2 A- 200 V174 mOhmsP - Channel20 V - 55 C+ 150 C1.9 WSmd/SmtSO - 8ReelSi   Enhancement Trenchfet
NTMFD5C446NLT1G


MOSFET T6 40V LL S08FL DS
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ON Semiconductor 5820
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AUD 5.823
Multiples of: 1

145 A40 V2.65 mOhmsN - Channel 1.2 V- 55 C+ 175 C125 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V54 nCEnhancement  
IQE220N15NM5CGSCATMA1


MOSFETs TRENCH >=100V
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Infineon 5810
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AUD 1.9045
Multiples of: 1

           Reel , Cut TapeSi     OptiMOS
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