MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLR120NTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
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Infineon 5820
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AUD 0.5606
Multiples of: 3000

11 A100 V265 mOhmsN - Channel    39 WSmd/SmtDPAKReelSi1 Channel16 V13.3 nC   
SIJA52DP-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8L
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Vishay 5820
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AUD 0.559
Multiples of: 1

         Smd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi     Trenchfet, Powerpak
NCV8402ASTT3G


ON Semiconductor MOSFET 42V 2.0A
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ON Semiconductor 5820
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AUD 0.6357
Multiples of: 1

2 A55 V165 mOhmsN - Channel    1.1 WSmd/SmtSOT - 223 - 3ReelSi2 Channel   Aec - Q101 
RV5C040APTCR1


MOSFET PCH -20V -4.0A MOSFET
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ROHM 5820
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AUD 0.6519
Multiples of: 1

4 A20 V85 mOhmsP - Channel 1 V- 55 C+ 150 C1.5 WSMD/SMTDFN - 1616 - 8Reel , Cut TapeSi1 Channel- 8 V , 0 V8.5 nCEnhancement  
SQS407ENW-T1_GE3


MOSFET -30V Vds 20V Vgs PowerPAK 1212-8W
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Vishay 5820
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AUD 0.6952
Multiples of: 1

16 A30 V10.8 mOhmsP - Channel 1.5 V- 55 C+ 175 C62.5 WSmd/SmtPOWERPAK - 1212 - 8WCut TapeSi1 Channel20 V77 nCEnhancement  
FDN86265P


MOSFET PT5 150/25V Pch PowerTrench MOSFET
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ON Semiconductor 5820
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AUD 0.6974
Multiples of: 3000

- 0.8 A- 150 V1.2 OhmsP - Channel25 V- 3.3 V- 55 C+ 150 C1.5 WSmd/SmtSUPERSOT - 3ReelSi1 Channel25 V2.9 nCEnhancement Powertrench
IRF720PBF-BE3


N-Channel 400V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 5820
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AUD 0.731
Multiples of: 1000

3.3 A400 V1.8 OhmsN - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V20 nCEnhancement  
FQP10N20C


MOSFET 200V N-Ch MOSFET
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ON Semiconductor 5820
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AUD 0.735
Multiples of: 1

9.5 A200 V360 mOhmsN - Channel  - 55 C+ 150 C72 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Qfet
IRL520PBF-BE3


N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
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Vishay 5820
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AUD 0.7859
Multiples of: 1000

9.2 A100 V270 mOhmsN - Channel 2 V- 55 C+ 175 C60 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V12 nCEnhancement  
IRLB4132PBF


International Rectifier MOSFET
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Infineon 1411
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AUD 0.6306
Multiples of: 1

150 A30 V2.5 mOhmsN - Channel 1.35 V- 55 C+ 175 C140 WThrough HoleTO - 220 - 3Tube-1 Channel20 V54 nCEnhancement Strongirfet
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