MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR120NTRPBF


MOSFET N Trench 100V 9.4A 4V @ 250uA 210 mΩ @ 5.6A,10V TO-252-2 (DPAK) RoHS
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Infineon 8681
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AUD 0.2237
Multiples of: 5

   N - Channel  - 55 C+ 175 C Smd/SmtDPAKReel       
2SK3018W


30V 100mA 8Ω@4V,10mA 200mW 1.5V@100uA null SOT-323 MOSFETs ROHS
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Yongyutai Electronics 6159
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AUD 0.0168
Multiples of: 50

                   
IPL65R230C7


Infineon Technologies MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
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Infineon 6158
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AUD 1.6133
Multiples of: 1

10 A650 V230 mOhmsN - Channel20 V3 v to 4 V- 40 C+ 150 C67 WSmd/SmtVSON - 4ReelSi1 Channel20 V20 nCEnhancement Coolmos
TM2N7002K


SOT-23 MOSFETs ROHS
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Tritech-MOS 6157
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AUD 0.0143
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TPNTZD3155CT1G


SOT563 MOSFETs ROHS
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TECH PUBLIC 6149
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AUD 0.1076
Multiples of: 5

                   
IRFR15N20DTRPBF


Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
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Infineon 6144
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AUD 0.8748
Multiples of: 1

17 A200 V165 mOhmsN - Channel30 V5.5 V- 55 C+ 175 C140 WSmd/SmtDPAK - 3Reel   27 nCEnhancement  
PMDXB950UPEZ


NXP Semiconductors MOSFET 20 V, dual P-channel Trench MOSFET
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Nexperia 6138
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AUD 0.1327
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- 500 mA , - 500 mA- 20 v , - 20 V5 Ohms , 5 OhmsP - Channel - 450 mV , - 450 mV- 55 C+ 150 C380 mWSmd/SmtDFN1010B - 6ReelSi2 Channel+/- 8 v , +/- 8 V1.19 nCEnhancement  
BSZ050N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
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Infineon 6131
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AUD 0.3527
Multiples of: 1

            Optimos 3      
WSD75N12GDN56


DFN-8(5x6) MOSFETs ROHS
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Winsok 6121
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AUD 1.2013
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IRF840ALPBF


MOSFET RECOMMENDED ALT 844-IRF840ALPBF
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Vishay 6098
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AUD 2.1825
Multiples of: 1

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