MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIDR870ADP-T1-GE3


MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 5820
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AUD 1.5058
Multiples of: 1

95 A100 V10.5 mOhmsN - Channel 3 V- 55 C+ 150 C125 WSmd/SmtPOWERPAK - SO - 8DC - 8Cut TapeSi1 Channel20 V25.5 nCEnhancement Trenchfet
SI7997DP-T1-GE3


Mosfet Array 2 P-Channel (Dual) 30V 60A 46W Surface Mount PowerPAK® SO-8 Dual
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Vishay 5820
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AUD 1.7631
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
IQE006NE2LM5SCATMA1


MOSFET
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Infineon 5820
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AUD 1.8223
Multiples of: 1

47 A25 V580 uOhmsN - Channel 2 V- 55 C+ 150 C2.1 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V82 nCEnhancement  
IQE008N03LM5SCATMA1


MOSFETs TRENCH <= 40V
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Infineon 5820
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AUD 1.9285
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           Reel , Cut TapeSi     OptiMOS
STL15DN4F5


MOSFET Dual N-CH 40V 15A STripFET V
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STMicroelectronics 5820
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AUD 1.3996
Multiples of: 3000

60 A40 V9 mOhmsN - Channel   + 175 C60 WSmd/SmtPowerflatReelSi2 Channel20 V  Aec - Q101Stripfet
FDMS3606AS


Fairchild Semiconductor MOSFET 30V Asymtrc Dual NCh PowerTrench MOSFET
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ON Semiconductor 5820
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AUD 2.0099
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13 A , 27 A30 V8 mOhms , 1.9 mOhmsn - channel 2 v , 1.8 V- 55 C+ 150 C2.5 Wsmd/smtPOWER - 56 - 8Reelsi2 channel+/- 20 V59 nC , 27 nC  power stage powertrench syncfet
VP3203N8-G


Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SOT89-3
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Microchip 5820
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AUD 2.0209
Multiples of: 2000

1.1 A30 V600 mOhmsP - Channel 1 V- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel- 10 V Enhancement  
STB6NK60ZT4


Transistor: N-MOSFET; unipolar; 600V; 3.8A; 110W; D2PAK
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STMicroelectronics 3880
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AUD 1.3174
Multiples of: 1000

            Supermesh      
FDN86501LZ


Fairchild Semiconductor MOSFET
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ON Semiconductor 1261
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AUD 1.6708
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2.6 A60 V198 mOhmsN - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V3.8 nCEnhancement Powertrench
STD5NM60-1


MOSFET N Trench 600V 5A (Tc) 5V @ 250uA 1 Ω @ 2.5A,10V TO-251 (I-PAK) RoHS
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STMicroelectronics 124
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AUD 1.609
Multiples of: 1

5 A600 V1 Ohmsn - channel30 V - 55 C+ 150 C96 Wthrough holeIPAK - 3Tube    enhancement  
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